Datasheet > MWI100-12E8

MWI100-12E8

更新时间： 2024-11-17 21:54:47

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
2页	73K
描述
IGBT Modules

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中文翻译

获取价格

数据手册

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MWI100-12E8 数据手册

Advanced Technical Information

MWI 100-12 E8

I_C25

V_CES

V_{CE(sat) typ.}= 2.0 V

= 165 A

= 1200 V

IGBT Modules

Sixpack

Short Circuit SOA Capability

Square RBSOA

13, 21

14, 20

Features

IGBTs

• IGBTs

Symbol

V_CES

Conditions

Maximum Ratings

- low saturation voltage

- positive temperature coefficient

- fast switching

- short tail current for optimized

performance also in resonant circuits

• HiPerFRED^TMdiode:

T_VJ= 25°C to 150°C

1200

V_GES

I_C25

I_C80

T_C= 25°C

T_C= 80°C

165

115

- fast reverse recovery

- low operating forward voltage

- low leakage current

• Industry Standard Package

- solderable pins for PCB mounting

- isolated copper base plate

RBSOA

V_GE= 15 V; R = 10 Ω; T_VJ= 125°C

I_CM

200

µs

Clamped induc^Gtive load; L = 100 µH

V_CEK≤ V_CES

t_SC

(SCSOA)

V_CE= 900 V; V_GE= 15 V; R_G= 10 Ω; T_VJ= 125°C

non-repetitive

P_tot

T_C= 25°C

640

Typical Applications

• AC drives

• power supplies with power factor

correction

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise specified)

min.

typ. max.

V_CE(sat)

I_C= 100 A; V_GE= 15 V; T_VJ= 25°C

T_VJ= 125°C

2.0

2.2

2.5

V_GE(th)

I_CES

I_C= 4 mA; V_GE= V_CE

4.5

6.5

V_CE= V_CES; V_GE= 0 V; T_VJ= 25°C

T_VJ= 125°C

1.4 mA

1.4

I_GES

V_CE= 0 V; V_GE

20 V

400 nA

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

150

680

Inductive load, T_VJ= 125°C

V_CE= 600 V; I_C= 100 A

V_GE= 15 V; R_G= 10 Ω

C_ies

Q_Gon

V_CE= 25 V; V_GE= 0 V; f = 1 MHz

V_CE= 600V; V_GE= 15 V; I_C= 100 A

7.4

µC

R_thJC

(per IGBT)

0.19 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

1 - 2

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