Datasheet > MTM231230L

MTM231230L

更新时间： 2024-10-15 12:26:43

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描述
Silicon P-channel MOSFET For Switching

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数据手册

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MTM231230L 数据手册

Doc No. TT4-EA-14177

Revision. 2

Product Standards

MOS FET

MTM231232LBF

Silicon P-channel MOSFET

Unit : mm

For Switching

2.0

0.3

0.15

MTM76123 in SMini3 type package

 Features



Low Drain-source On-state Resistance : RDS(on) typ. = 40 m (VGS = -4 V)

Low Drive Voltage : 2.5 V Drive

Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)

0.9

 Marking Symbol :

 Packaging

(0.65)(0.65)

1.3

Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

1. Gate

2. Source

3. Drain

 Absolute Maximum Ratings Ta = 25 C

Panasonic

JEITA

SMini3-G1-B

SC-70

SOT-323

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Drain Current (Pulsed) ^*1

Total Power Dissipation ^*2

Channel Temperature

Symbol

VDS

VGS

Rating

-20

10

-3

-16

500

150

Unit

C

Code

IDp

Tch

Tstg

Internal Connection

Ｄ

Storage Temperature Range

-55 to +150

Note *1

Pulse width  10 s, Duty cycle  1 %

Measuring on ceramic board at 40 mm  38 mm  0.1 mm.

Absolute maximum rating PD Non-heat sink shall be made 150 mW.

Ｇ

Ｓ

Pin Name

1. Gate

2. Source

3. Drain

Page 1 of 6

Established : 2012-04-21

Revised : 2013-03-07

12 3 4 5 6 7

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