生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
配置: | SINGLE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 1.2 A | 最大漏源导通电阻: | 0.33 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTM232270LBF | PANASONIC |
获取价格 |
Silicon N-channel MOSFET For switching Low drive voltage: 2.5 V drive | |
MTM24N50 | NJSEMI |
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Trans MOSFET N-CH 450V 24A | |
MTM24N50E | MOTOROLA |
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Power Field-Effect Transistor, 24A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
MTM25N05 | MOTOROLA |
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25A, 50V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
MTM25N05L | MOTOROLA |
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Power Field-Effect Transistor, 25A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal | |
MTM25N06 | MOTOROLA |
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25A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
MTM25N06L | MOTOROLA |
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Power Field-Effect Transistor, 25A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal | |
MTM25N10 | MOTOROLA |
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POWER FIELD EFFECT TRANSISTOR | |
MTM25N10 | NJSEMI |
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Trans MOSFET P-CH 20V 3A 3-Pin SMini3-G1 T/R | |
MTM25N10E | MOTOROLA |
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25A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |