是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 4.5 A | 最大漏极电流 (ID): | 4.5 A |
最大漏源导通电阻: | 0.04 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.5 W | 子类别: | FET General Purpose Powers |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTM23224 | PANASONIC |
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Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
MTM232270LBF | PANASONIC |
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Silicon N-channel MOSFET For switching Low drive voltage: 2.5 V drive | |
MTM24N50 | NJSEMI |
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Trans MOSFET N-CH 450V 24A | |
MTM24N50E | MOTOROLA |
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Power Field-Effect Transistor, 24A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
MTM25N05 | MOTOROLA |
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25A, 50V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
MTM25N05L | MOTOROLA |
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Power Field-Effect Transistor, 25A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal | |
MTM25N06 | MOTOROLA |
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25A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
MTM25N06L | MOTOROLA |
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Power Field-Effect Transistor, 25A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal | |
MTM25N10 | MOTOROLA |
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POWER FIELD EFFECT TRANSISTOR | |
MTM25N10 | NJSEMI |
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Trans MOSFET P-CH 20V 3A 3-Pin SMini3-G1 T/R |