Datasheet > MTE2D0N06RF3-0-T7-X

MTE2D0N06RF3-0-T7-X

更新时间： 2024-09-19 01:20:07

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	426K
描述
N-Channel Enhancement Mode Power MOSFET

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MTE2D0N06RF3-0-T7-X 数据手册

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Spec. No. : C037F3

Issued Date : 2017.09.26

Revised Date :

CYStech Electronics Corp.

Page No. : 1/ 9

N-Channel Enhancement Mode Power MOSFET

MTE2D0N06RF3

BV^DSS

ID@VGS=10V, TC=25°C

60V

75A

18.5A

Features

ID@VGS=10V, TA=25°C

RDS(ON)@VGS=10V, ID=50A

2.8mΩ(typ)

• Low On Resistance

• Simple Drive Requirement

• Low Gate Charge

• Fast Switching Characteristic

• RoHS compliant package

Symbol

Outline

TO-263

MTE2D0N06RF3

G：Gate D：Drain S：Source

Ordering Information

Device

Package

TO-263

(Pb-free lead plating and RoHS compliant package)

Shipping

MTE2D0N06RF3-0-T7-X

800 pcs / Tape & Reel

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T7 : 800 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

MTE2D0N06RF3

CYStek Product Specification

12 3 4 5 6 7...9

中文翻译

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