Datasheet > MTE2D0N06RFP-0-UB-G

MTE2D0N06RFP-0-UB-G

更新时间： 2024-09-19 01:21:51

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
8页	652K
描述
N-Channel Enhancement Mode Power MOSFET

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数据手册

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MTE2D0N06RFP-0-UB-G 数据手册

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Spec. No. : C037E3

Issued Date : 2018.09.27

Revised Date :

CYStech Electronics Corp.

Page No. : 1/ 8

N-Channel Enhancement Mode Power MOSFET

MTE2D0N06RFP

BVDSS

ID@VGS=10V, TC=25°C

60V

125A(silicon limit)

17.7A

Features

ID@VGS=10V, TA=25°C

RDS(ON)@VGS=10V, ID=50A

2.8mΩ(typ)

 Low On Resistance

 Simple Drive Requirement

 Low Gate Charge

 Fast Switching Characteristic

 Insulating package, front/back side insulating voltage=2500V(AC)

 RoHS compliant package

Symbol

Outline

TO-220FP

MTE2D0N06RFP

G：Gate D：Drain S：Source

G D S

Ordering Information

Device

Shipping

50 pcs/tube, 20 tubes/box, 4 boxes / carton

Package

TO-220FP

(RoHS compliant)

MTE2D0N06RFP-0-UB-G

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, UB : 50 pcs / tube, 20 tubes/box

Product rank, zero for no rank products

Product name

MTE2D0N06RE3

CYStek Product Specification

12 3 4 5 6 7 8

中文翻译

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