Datasheet > MTE300N20J3

MTE300N20J3

更新时间： 2024-09-19 01:20:47

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	401K
描述
N -Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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MTE300N20J3 数据手册

Spec. No. : C875J3

Issued Date : 2016.01.13

Revised Date : 2016.01.14

Page No. : 1/9

CYStech Electronics Corp.

N -Channel Enhancement Mode Power MOSFET

BVDSS

ID@VGS=10V, TC=25°C

RDS(ON)@VGS=10V, ID=3A

200V

8.3A

MTE300N20J3

294mΩ(typ)

Features

• Low Gate Charge

• Simple Drive Requirement

• Pb-free lead plating and halogen-free package

Equivalent Circuit

Outline

MTE300N20J3

TO-252(DPAK)

D S

G：Gate D：Drain

S：Source

Ordering Information

Device

Package

TO-252

(Pb-free lead plating and halogen-free package)

Shipping

MTE300N20J3-0-T3-G

2500 pcs / Tape & Reel

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T3 : 2500 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

MTE300N20J3

CYStek Product Specification

12 3 4 5 6 7...9

中文翻译

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