Datasheet > MTE2D0N06RH8

MTE2D0N06RH8

更新时间： 2024-09-19 01:21:27

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
11页	811K
描述
N-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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MTE2D0N06RH8 数据手册

Spec. No. : C037H8

Issued Date : 2017.08.04

Revised Date :

CYStech Electronics Corp.

Page No. : 1/ 11

N-Channel Enhancement Mode Power MOSFET

BVDSS

ID@VGS=10V, TC=25°C

60V

145A(silicon limit)

MTE2D0N06RH8

84A(package limit)

23A

ID@VGS=10V, TC=25°C

ID@VGS=10V, TA=25°C

RDS(ON)@VGS=10V, ID=30A

Features

2.2mΩ(typ)

• Low On Resistance

• Simple Drive Requirement

• Low Gate Charge

• Fast Switching Characteristic

• Pb-free lead plating and Halogen-free package

Symbol

Outline

MTE2D0N06RH8

DFN5×6

Pin 1

G：Gate D：Drain S：Source

Pin 1

Ordering Information

Device

Package

Shipping

DFN 5 ×6

MTE2D0N06RH8-0-T6-G

3000 pcs / tape & reel

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTE2D0N06RH8

CYStek Product Specification

12 3 4 5 6 7...11

中文翻译

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