Datasheet > MTE300N20I3S

MTE300N20I3S

更新时间： 2024-09-19 01:20:47

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
8页	329K
描述
N -Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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MTE300N20I3S 数据手册

Spec. No. : C875I3S

Issued Date : 2017.01.25

Revised Date :

CYStech Electronics Corp.

Page No. : 1/8

N -Channel Enhancement Mode Power MOSFET

BVDSS

ID@VGS=10V, TC=25°C

RDS(ON)@VGS=10V, ID=3A

200V

8.3A

MTE300N20I3S

294mΩ(typ)

Features

• Low Gate Charge

• Simple Drive Requirement

• Pb-free lead plating and halogen-free package

Equivalent Circuit

Outline

TO-251S

MTE300N20I3S

G：Gate D：Drain

S：Source

Ordering Information

Device

Package

Shipping

80 pcs/tube, 50 tubes/box

TO-251S

MTE300N20I3S-0-UA-G

(RoHS compliant and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, UA : 80 pcs / tube, 50 tubes/box

Product rank, zero for no rank products

Product name

MTE300N20I3S

CYStek Product Specification

12 3 4 5 6 7 8

中文翻译

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