MTE30N50E

更新时间： 2024-09-17 22:29:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
8页	231K
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TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM

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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

30 AMPERES

500 VOLTS

This advanced TMOS E–FET is designed to withstand high

energy in the avalanche mode and switch efficiently. This new

energy design also offers a drain–to–source diode with fast

recovery time. Designed for high voltage, high speed switching

applications in power supplies, PWM motor controls, and other

inductive loads. The avalanche energy capability is specified to

eliminate the guesswork in designs where inductive loads are

switched and offer additional safety margin against unexpected

voltage transients.

= 0.150 OHM

DS(on)

•

2500 V RMS Isolated ISOTOP Package

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

Very Low Internal Parasitic Inductance

and V

Specified at Elevated Temperature

SOT–227B

DSS

DS(on)

U.L. Recognized, File #E69369

1. Source

2. Gate

3. Drain

4. Source 2

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

500

Vdc

DSS

Drain–to–Gate Voltage (R

= 1.0 MΩ)

DGR

Vdc

Gate–to–Source Voltage — Continuous

— Non–Repetitive (t ≤ 10 ms)

± 20

± 40

Vdc

Vpk

GSM

Drain Current — Continuous @ 25°C

Drain Current — Continuous @ 100°C

Adc

Apk

Drain Current — Single Pulse (t ≤ 10 µs)

Total Power Dissipation @ 25°C

Derate above 25°C

250

2.0

Watts

W/°C

Operating and Storage Temperature Range

T , T

J stg

–55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy – Starting T = 25°C

= 100 Vdc, V = 10 Vdc, Peak I = 30 Apk, L = 10 mH, R = 25 Ω)

GS L G

3000

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

0.5

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

This document contains information on a new product. Specifications and information herein are subject to change without notice.

E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

ISOTOP is a trademark of SGS–THOMSON Microelectronics.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

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