Datasheet > MTE3D0N04J3-0-T3-G

MTE3D0N04J3-0-T3-G

更新时间： 2024-11-08 01:21:51

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	664K
描述
N-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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MTE3D0N04J3-0-T3-G 数据手册

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Spec. No. : C014J3

Issued Date : 2019.01.02

Revised Date :

CYStech Electronics Corp.

Page No. : 1/ 9

N-Channel Enhancement Mode Power MOSFET

MTE3D0N04J3

BVDSS

40V

96.6A(silicon limit)

56A(package limit)

2.8 mΩ(typ)

ID@VGS=10V, TC=25°C

RDS(ON)@VGS=10V, ID=20A

Features

 Low On Resistance

 Simple Drive Requirement

 Low Gate Charge

 Fast Switching Characteristic

 Pb-free lead plating and halogen-free package

Symbol

Outline

TO-252(DPAK)

MTE3D0N04J3

D S

G：Gate D：Drain S：Source

Ordering Information

Shipping

Device

Package

TO-252

(Pb-free lead plating and halogen-free package)

MTE3D0N04J3-0-T3-G

2500 pcs / tape& reel

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T3 : 2500 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

MTE3D0N04J3

CYStek Product Specification

12 3 4 5 6 7...9

中文翻译

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