Datasheet > MTE30N20FP

MTE30N20FP

更新时间： 2024-09-19 01:20:11

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
8页	446K
描述
N -Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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MTE30N20FP 数据手册

Spec. No. : C138FP

Issued Date : 2016.03.31

Revised Date :

CYStech Electronics Corp.

Page No. : 1/8

N -Channel Enhancement Mode Power MOSFET

BVDSS

MTE30N20FP

ID@VGS=10V, TC=25°C

200V

37A

ID@VGS=10V, TA=25°C

4.8A

27.9mΩ

RDSON(TYP)

VGS=10V, ID=17A

Features

• Low Gate Charge

• Simple Drive Requirement

• Insulating package, front/back side insulating voltage=2500V(AC)

• Pb-free lead plating package

Symbol

Outline

TO-220FP

MTE30N20FP

G：Gate

S：Source

D：Drain

G D S

Ordering Information

Device

Shipping

50 pcs/tube, 20 tubes/box, 4 boxes / carton

Package

TO-220FP

(RoHS compliant)

MTE30N20FP-0-UB-S

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, UB : 50 pcs / tube, 20 tubes/box

Product rank, zero for no rank products

Product name

MTE30N20FP

CYStek Product Specification

12 3 4 5 6 7 8

中文翻译

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