Datasheet > MTE2D4N06F7T

MTE2D4N06F7T

更新时间： 2024-09-19 01:18:51

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	507K
描述
N-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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MTE2D4N06F7T 数据手册

Spec. No. : C933F7T

Issued Date : 2016.12.30

Revised Date : 2017.01.03

Page No. : 1/9

CYStech Electronics Corp.

N-Channel Enhancement Mode Power MOSFET

MTE2D4N06F7T

BVDSS

60V

ID @VGS=10V, TC=25°C

RDSON(TYP) @ VGS=10V, ID=20A

172A

2.0mΩ

Features

• Simple Drive Requirement

• Fast Switching Characteristic

• RoHS compliant package

Symbol

Outline

MTE2D4N06F7T

TO-263-7L-4C

G：Gate D：Drain S：Source

Ordering Information

Device

Package

Shipping

800 pcs / Tape & Reel

TO-263-7L-4C

(Pb-free lead plating and RoHS compliant package)

MTE2D4N06F7T-0-T7-X

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T7 : 800 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

MTE2D4N06F7T

CYStek Product Specification

12 3 4 5 6 7...9

中文翻译

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