Datasheet > MTD6N20ET4G

MTD6N20ET4G

更新时间： 2024-11-01 05:50:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	85K
描述
Power MOSFET 6 Amps, 200 Volts N−Channel DPAK

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

MTD6N20ET4G 数据手册

MTD6N20E

Preferred Device

Power MOSFET

6 Amps, 200 Volts

N−Channel DPAK

This advanced Power MOSFET is designed to withstand high

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain−to−source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where

diode speed and commutating safe operating areas are critical and

offer additional safety margin against unexpected voltage transients.

http://onsemi.com

6 AMPERES, 200 VOLTS

R_DS(on)= 460 mW

N−Channel

Features

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• I

and V

Specified at Elevated Temperature

DSS

DS(on)

• Pb−Free Package is Available*

MARKING

DIAGRAMS

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol Value

Unit

Vdc

Drain−to−Source Voltage

200

4 Drain

DSS

DGR

Drain−to−Gate Voltage (R = 1.0 MW)

DPAK

CASE 369C

STYLE 2

Gate−to−Source Voltage

− Continuous

Vdc

Vpk

GSM

− Non−repetitive (t ≤ 10 ms)

Drain Current

− Continuous

− Continuous @ 100°C

− Single Pulse (t ≤ 10 ms)

Gate

6.0

3.8

Adc

Apk

Drain

Source

Total Power Dissipation

Derate above 25°C

Total Power Dissipation @ T = 25°C (Note 2)

0.4

1.75

W/°C

4 Drain

DPAK

CASE 369D

STYLE 2

Operating and Storage Temperature Range

T , T

−55 to

150

°C

stg

Single Pulse Drain−to−Source Avalanche

Energy − Starting T = 25°C

(V = 80 Vdc, V = 10 Vdc,

I = 6.0 Apk, L = 3.0 mH, R = 25 W)

Gate Drain Source

6N20E Device Code

Thermal Resistance − Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

2.50

100

71.4

°C/W

°C

= Year

= Work Week

= Pb−Free Package

Maximum Temperature for Soldering

260

Purposes, 1/8″ from case for 10 secs

ORDERING INFORMATION

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. When surface mounted to an FR4 board using the minimum recommended

pad size.

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

2. When surface mounted to an FR4 board using the 0.5 sq. in. drain pad size.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

August, 2005 − Rev. 3

MTD6N20E/D

12 3 4 5 6 7...9

中文翻译

下载PDF

MTD6N20ET4G 替代型号

型号	品牌	替代类型	描述	数据表
MTD5P06VT4G	ONSEMI	类似代替	功率 MOSFET，-60V，-5A，450mΩ，单 P 沟道，DPAK
MTD6N20ET4	ONSEMI	类似代替	Power MOSFET 6 Amps, 200 Volts N−Channel DPAK

与MTD6N20ET4G相关器件

型号	品牌	获取价格	描述	数据表
MTD6N20ET5G	ONSEMI	获取价格	6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPA
MTD6P10E	MOTOROLA	获取价格	TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM
MTD6P10EG	ONSEMI	获取价格	6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3
MTD6P10ET4	ONSEMI	获取价格	6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
MTD6P10E-T4	MOTOROLA	获取价格	6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET
MTD6P10ET4G	ONSEMI	获取价格	6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3
MTD7030	MARKTECH	获取价格	PHOTO DIODE
MTD7030A	MARKTECH	获取价格	PHOTO DIODE
MTD8000D1	MARKTECH	获取价格	Photo Transistor,
MTD8000D3	MARKTECH	获取价格	Photo Transistor,

与MTD6N20ET4G相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

4
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

MTD6N20ET4G

MTD6N20ET4G 数据手册

MTD6N20ET4G 替代型号

与MTD6N20ET4G相关器件

与MTD6N20ET4G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MTD6N20ET4G

MTD6N20ET4G 数据手册

MTD6N20ET4G 替代型号

与MTD6N20ET4G相关器件

与MTD6N20ET4G相关文章

您还可以找

您在本页遇到什么问题？