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MTD6P10EG PDF预览

MTD6P10EG

更新时间: 2024-11-01 15:45:43
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 96K
描述
6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3

MTD6P10EG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, CASE 369C-01, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.31其他特性:AVALANCHE RATED
雪崩能效等级(Eas):180 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):6 A最大漏极电流 (ID):6 A
最大漏源导通电阻:0.66 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):18 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MTD6P10EG 数据手册

 浏览型号MTD6P10EG的Datasheet PDF文件第2页浏览型号MTD6P10EG的Datasheet PDF文件第3页浏览型号MTD6P10EG的Datasheet PDF文件第4页浏览型号MTD6P10EG的Datasheet PDF文件第5页浏览型号MTD6P10EG的Datasheet PDF文件第6页浏览型号MTD6P10EG的Datasheet PDF文件第7页 
MTD6P10E  
Preferred Device  
Power MOSFET  
6 Amps, 100 Volts  
P−Channel DPAK  
This Power MOSFET is designed to withstand high energy in the  
avalanche and commutation modes. The energy efficient design also  
offers a drain−to−source diode with a fast recovery time. Designed for  
low voltage, high speed switching applications in power supplies,  
converters and PWM motor controls, these devices are particularly  
well suited for bridge circuits where diode speed and commutating  
safe operating areas are critical and offer additional safety margin  
against unexpected voltage transients.  
http://onsemi.com  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
100 V  
660 mW  
6.0 A  
P−Channel  
Avalanche Energy Specified  
Source−to−Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
D
Diode is Characterized for Use in Bridge Circuits  
I  
and V  
Specified at Elevated Temperature  
G
DSS  
DS(on)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
S
Rating  
Symbol  
Value  
Unit  
MARKING DIAGRAM  
Drain−to−Source Voltage  
V
DSS  
100  
Vdc  
& PIN ASSIGNMENTS  
Drain−to−Gate Voltage (R = 1.0 M)  
V
DGR  
100  
Vdc  
GS  
4
4
Drain  
Gate−to−Source Voltage  
− Continuous  
V
± 15  
± 20  
Vdc  
Vpk  
2
1
GS  
− Non−repetitive (t 10 ms)  
V
GSM  
3
p
CASE 369C  
DPAK  
STYLE 2  
Drain Current  
− Continuous  
− Continuous @ 100°C  
− Single Pulse (t 10 µs)  
I
I
6.0  
3.9  
18  
Adc  
Apk  
D
D
1
2
3
I
DM  
p
Gate  
Drain Source  
Total Power Dissipation  
Derate above 25°C  
Total Power Dissipation @ T = 25°C  
P
D
50  
0.4  
1.75  
Watts  
W/°C  
Watts  
6P10E  
Y
= Device Code  
= Year  
A
WW  
T
= Work Week  
= MOSFET  
(Note 2.)  
Operating and Storage Temperature  
Range  
T , T  
55 to  
150  
°C  
J
stg  
ORDERING INFORMATION  
Single Pulse Drain−to−Source Avalanche  
E
AS  
180  
mJ  
Energy − Starting T = 25°C  
J
Device  
Package  
DPAK  
Shipping  
(V = 25 Vdc, V = 10 Vdc,  
DD  
GS  
I = 6.0 Apk, L = 10 mH, R = 25 )  
MTD6P10E  
75 Units/Rail  
L
G
Thermal Resistance  
− Junction to Case  
− Junction to Ambient (Note 1.)  
− Junction to Ambient (Note 2.)  
°C/W  
°C  
MTD6P10ET4  
DPAK  
2500 Tape & Reel  
R
R
R
2.50  
100  
71.4  
θ
JC  
JA  
JA  
θ
θ
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Maximum Temperature for Soldering  
Purposes, 1/8from case for 10  
seconds  
T
260  
L
Preferred devices are recommended choices for future use  
and best overall value.  
1. When surface mounted to an FR4 board using the minimum  
recommended pad size.  
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
November, 2003 − Rev. 2  
MTD6P10E/D  
 

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