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MTD8060P PDF预览

MTD8060P

更新时间: 2024-11-02 10:43:11
品牌 Logo 应用领域
MARKTECH 晶体光电晶体管光电晶体管
页数 文件大小 规格书
2页 100K
描述
Photo Transistor

MTD8060P 数据手册

 浏览型号MTD8060P的Datasheet PDF文件第2页 
Photo Transistor  
MTD8060P  
Features  
HIgh Reliability  
Narrow Angular Response  
Applications  
Optical Switches  
Optical Sensors  
Edge Sensing  
Smoke Detectors  
Maximum Ratings (Ta=25oC)  
Characteristic  
Symbol  
Max.  
250  
30  
Test  
Condition  
Unit  
mW  
V
Collector Power  
Dissipation  
PC  
Collector−Emitter  
Voltage  
VCE  
Emitter−Collector  
Voltage  
VEC  
5
V
Collector Current  
IC  
50  
mA  
oC  
oC  
Operating Temperature  
Storage Temperature  
Topr  
Tstg  
−30 ~  
+100  
Junction Temperature  
Soldering Temperature  
Tj  
125  
260  
oC  
Tsol  
for 5 sec. max oC  
Opto−Electrical Characteristics (Ta=25oC)  
Characteristic  
C−E Saturation Voltage  
Light Current  
Symbol  
Test Condition  
Min  
Typ  
.20  
Max  
Unit  
µA  
µA  
nA  
µA  
V
VCE(sat)  
Ic=0.2mA,Ee=5mW/cm2*  
IL  
ID  
λ
Vce=20V, Ee=0.5mW/cm2*  
3.00  
Dark Current  
Vce=20V, Ee=0mW/cm2*  
100  
Spectral Sensitivity  
Peak Sensitivity Wavelength  
Beam Angle  
400~1100  
880  
± 12o  
10.00  
10.00  
λp  
θ
deg.  
ns  
Rise Time  
Tr  
Tf  
RL=100,Vce=5V,Ic=0.5mA  
RL=100,Vce=5V,Ic=0.5mA  
Fall Time  
ns  
Company Headquarters  
3 Northway Lane North  
Latham, New York 12110  
Toll Free: 800.984.5337  
Fax: 518.785.4725  
California Sales Office:  
950 South Coast Drive, Suite 265  
Costa Mesa, California 92626  
Toll Free: 800.984.5337  
Web: www.marktechopto.com | Email: info@marktechopto.com  
Fax: 714.850.9314  

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