Datasheet > MTD8060N

MTD8060N

更新时间： 2024-11-20 10:43:11

品牌	Logo	应用领域
MARKTECH		晶体光电晶体管光电晶体管
页数	文件大小	规格书
2页	107K
描述
Photo Transistor

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中文翻译

获取价格

数据手册

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MTD8060N 数据手册

Photo Transistor

MTD8060N

Features

High Reliability in Demading Enviroments

Metal Can Package

Applications

Smoke Detectors

Optical Sensors

Optical Switches

Edge Sensing

Maximum Ratings (Ta=25^oC)

Characteristic

Symbol

Max.

250

Test

Condition

Unit

Collector Power

Dissipation

−

Collector−Emitter

Voltage

VCE

Emitter−Collector

Voltage

VEC

Collector Current

−

^oC

Operating Temperature

Topr

−30 ~

+100

Storage Temperature

Tstg

−40 ~

+125

−

^oC

Junction Temperature

Soldering Temperature

125

260

Tsol

for 5 sec. max ^oC

Opto−Electrical Characteristics (Ta=25^oC)

Characteristic

C−E Saturation Voltage

Light Current

Symbol

Test Condition

Min

−

Typ

.20

Max

−

Unit

µA

VCE(sat)

Ic=0.2mA,Ee=5mW/cm2*

Vce=20V, Ee=0.5mW/cm2*

−

3.00

−

Dark Current

Vce=20V, Ee=0.5mW/cm2*

−

100

−

Spectral Sensitivity

Peak Sensitivity Wavelength

Beam Angle

−

400~1100

880

± 12^o

10.00

λp

−

deg.

Rise Time

RL=100,Vce=5V,Ic=0.5mA

−

Fall Time

−

*Color Temperature=2870ºK Standard Tungston Lamp

Company Headquarters

3 Northway Lane North

Latham, New York 12110

Toll Free: 800.984.5337

California Sales Office:

950 South Coast Drive, Suite 265

Costa Mesa, California 92626

Toll Free: 800.984.5337

Fax: 518.785.4725

Web: www.marktechopto.com | Email: info@marktechopto.com

Fax: 714.850.9314

中文翻译

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