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MTD9N10E PDF预览

MTD9N10E

更新时间： 2024-11-19 22:26:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 260K
描述
TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

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MTD9N10E 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.16Is Samacsys：N
其他特性：AVALANCHE RATED雪崩能效等级（Eas）：40 mJ
外壳连接：DRAIN配置：SINGLE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：9 A
最大漏极电流 (ID)：9 A最大漏源导通电阻：0.25 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：40 W
最大脉冲漏极电流 (IDM)：27 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MTD9N10E 数据手册

 浏览型号MTD9N10E的Datasheet PDF文件第2页浏览型号MTD9N10E的Datasheet PDF文件第3页浏览型号MTD9N10E的Datasheet PDF文件第4页浏览型号MTD9N10E的Datasheet PDF文件第5页浏览型号MTD9N10E的Datasheet PDF文件第6页浏览型号MTD9N10E的Datasheet PDF文件第7页 
Order this document  
by MTD9N10E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
N–Channel Enhancement–Mode Silicon Gate  
TMOS POWER FET  
9.0 AMPERES  
100 VOLTS  
This advanced TMOS E–FET is designed to withstand high  
energy in the avalanche and commutation modes. The new energy  
efficient design also offers a drain–to–source diode with a fast  
recovery time. Designed for low voltage, high speed switching  
applications in power supplies, converters and PWM motor  
controls, these devices are particularly well suited for bridge circuits  
where diode speed and commutating safe operating areas are  
critical and offer additional safety margin against unexpected  
voltage transients.  
R
= 0.25 OHM  
DS(on)  
•
•
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
D
•
•
•
Diode is Characterized for Use in Bridge Circuits  
I
and V Specified at Elevated Temperature  
DSS  
DS(on)  
Surface Mount Package Available in 16 mm, 13–inch/2500  
Unit Tape & Reel, Add T4 Suffix to Part Number  
Replaces MTD6N10  
G
CASE 369A–13, Style 2  
DPAK  
•
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
100  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
V
DSS  
Drain–Gate Voltage (R  
= 1.0 MΩ)  
Gate–Source Voltage — Continuous  
V
DGR  
100  
GS  
V
± 20  
± 30  
Vdc  
Vpk  
GS  
Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)  
V
GSM  
p
Drain Current — Continuous  
Drain Current — Continuous @ 100°C  
Drain Current — Single Pulse (t ≤ 10 µs)  
I
I
9.0  
5.0  
27  
Adc  
Apk  
D
D
I
p
DM  
Total Power Dissipation  
Derate above 25°C  
Total Power Dissipation @ T = 25°C, when mounted to minimum recommended pad size  
P
D
40  
0.32  
1.75  
Watts  
W/°C  
Watts  
A
Operating and Storage Temperature Range  
T , T  
stg  
–55 to 150  
40  
°C  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 25 Vdc, V = 10 Vdc, I = 9.0 Apk, L = 1.0 mH, R = 25 Ω)  
GS L G  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
Thermal Resistance — Junction to Ambient, when mounted to minimum recommended pad size  
R
θJC  
R
θJA  
R
θJA  
3.13  
100  
71.4  
°C/W  
Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1995  
1234567...10

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MTD9N10E 替代型号

型号 品牌 替代类型 描述 数据表
NTD6416ANT4G ONSEMI

功能相似

 N-Channel Power MOSFET 100 V, 17 A, 81 m
MTD9N10E ONSEMI

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 POWER MOSFET 9 AMPS, 100 VOLTS

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