MTD9N10D

更新时间： 2024-09-15 03:28:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	113K
描述
POWER MOSFET 9 AMPS, 100 VOLTS

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中文翻译

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数据手册

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MTD9N10D 数据手册

MTD9N10E

Preferred Device

Power MOSFET

9 Amps, 100 Volts

N–Channel DPAK

This advanced Power MOSFET is designed to withstand high

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain–to–source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where

diode speed and commutating safe operating areas are critical and

offer additional safety margin against unexpected voltage transients.

http://onsemi.com

9 AMPERES

100 VOLTS

= 250 mΩ

DS(on)

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

N–Channel

• Diode is Characterized for Use in Bridge Circuits

• I

and V

Specified at Elevated Temperature

DSS

DS(on)

• Replaces MTD6N10

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–Source Voltage

Symbol

Value

100

Unit

Vdc

MARKING

DIAGRAM

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

100

Gate–Source Voltage

– Continuous

YWW

N10E

CASE 369A

DPAK

STYLE 2

± 20

± 30

Vdc

Vpk

– Non–Repetitive (t ≤ 10 ms)

GSM

Drain Current – Continuous

Drain Current – Continuous @ 100°C

Drain Current – Single Pulse (t ≤ 10 µs)

9.0

5.0

Adc

Apk

= Year

= Work Week

= MOSFET

Total Power Dissipation

Derate above 25°C

Total Power Dissipation @ T = 25°C, when

0.32

1.75

Watts

W/°C

Watts

PIN ASSIGNMENT

mounted to minimum recommended pad

size

Drain

Operating and Storage Temperature

Range

T , T

J stg

–55 to

150

°C

Single Pulse Drain–to–Source Avalanche

Energy – Starting T = 25°C

= 25 Vdc, V

= 10 Vdc,

= 9.0 Apk, L = 1.0 mH, R = 25 Ω)

Gate

Drain Source

Thermal Resistance

°C/W

°C

ORDERING INFORMATION

– Junction to Case

– Junction to Ambient

– Junction to Ambient, when mounted

to minimum recommended pad size

3.13

100

71.4

θJC

θJA

Device

Package

DPAK

Shipping

75 Units/Rail

MTD9N10E

Maximum Temperature for Soldering

Purposes, 1/8″ from case for 10

seconds

260

MTD9N10E1

MTD9N10ET4

DPAK

75 Units/Rail

DPAK

2500 Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

February, 2001 – Rev. 4

MTD9N10E/D

12 3 4 5 6 7...12

中文翻译

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与MTD9N10D相关器件

型号	品牌	获取价格	描述	数据表
MTD9N10E	ONSEMI	获取价格	POWER MOSFET 9 AMPS, 100 VOLTS
MTD9N10E	MOTOROLA	获取价格	TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
MTD9N10E	ROCHESTER	获取价格	9A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
MTD9N10E1	ONSEMI	获取价格	POWER MOSFET 9 AMPS, 100 VOLTS
MTD9N10E1	ROCHESTER	获取价格	9A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
MTD9N10E-1	MOTOROLA	获取价格	Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Meta
MTD9N10EG	ONSEMI	获取价格	9A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, GREEN, CASE 369A-13, DPAK-3
MTD9N10ET4	ONSEMI	获取价格	POWER MOSFET 9 AMPS, 100 VOLTS
MTD9N10ET4	ROCHESTER	获取价格	9A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
MTDA02A1	ADAM-TECH	获取价格	HOUSING WITH IDC CONTACT .100 & .156 CENTERLINE

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