Datasheet > MTD8000N4-T

MTD8000N4-T

更新时间： 2024-11-02 11:53:47

品牌	Logo	应用领域
MARKTECH		/
页数	文件大小	规格书
3页	601K
描述
Peak Sensitivity Wavelength: 880nm

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技术参数
数据手册

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MTD8000N4-T 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	2.22
最大暗电源：	100 nA	安装特点：	THROUGH HOLE MOUNT
最大通态电流：	0.05 A	最高工作温度：	100 °C
最低工作温度：	-30 °C	峰值波长：	880 nm
最大功率耗散：	0.15 W	子类别：	Photo Transistors
表面贴装：	NO	Base Number Matches：	1

MTD8000N4-T 数据手册

Photo Transistor

Product No: MTD8000N4-T

Peak Sensitivity Wavelength: 880nm

The MTD8000N4-T is a photo transistor in a TO-18 metal can domed package. It is well suited for high

reliability and high sensitivity applications.

FEATURES

APPLICATIONS

> High Reliability in Demanding Environments

> Narrow Angular Response

> Metal Can Package

> Compact

> Optical Switches

> Edge Sensing

> Fiber Optical Communications

> Smoke Detectors

Absolute Maximum Ratings (Ta=25ºC)

ITEMS

SYMBOL

Vceo

Veco

RATINGS

UNIT

Collector-Emitter Voltage

Emitter-Collector Voltage

Collector Current

ºC

Collector Power Dissipation

Operating Temperature Range

Storage Temperature Range

Junction Temperature

Lead Soldering Temperature*1

150

Topr

Tstg

-30 ~ +100

-40 ~ +125

125

ºC

Tls

260

ºC

*1: Time 5 Sec max, Position: Up to 3mm from the body.

Electrical & Optical Characteristics (Ta = 25ºC)

ITEMS

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Light Current

Vce=20V, L=100Lux *1

3.0

Dark Current

Vce=20V

100

C-E Saturation Voltage

Spectral Sensitivity

Peak Sensitivity Wavelength

Switching Time (Rise Time)

Switching Time (Fall Time)

Anglar Response

VCE(sat)

Ic=0.2mA, L=1000Lux *1

0.2

400~1100

800~1100

880

µS

λp

RL=100Ω, Vcc=5V, Ic=1mA

10.0

±12

µS

deg

*1: Color Temperature=2870^OK Stardard Tungsten Lamp, *2: With Daylight Filter Type (Sensing Only IR Rays) also Available.

2011-07-19

Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA www.marktechopto.com

TOLL FREE: 1-800-984-5337 • PHONE: 518-956-2980 • FAX: 518-785-4725 • EMAIL: info@marktechopto.com

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