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MTD5P06VT4G PDF预览

MTD5P06VT4G

更新时间： 2024-11-25 11:13:55
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 184K
描述
功率 MOSFET，-60V，-5A，450mΩ，单 P 沟道，DPAK

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中文翻译

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MTD5P06VT4G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：LEAD FREE, CASE 369C-01, DPAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.87
其他特性：AVALANCHE RATED雪崩能效等级（Eas）：125 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：5 A
最大漏极电流 (ID)：5 A最大漏源导通电阻：0.45 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：40 W
最大脉冲漏极电流 (IDM)：18 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MTD5P06VT4G 数据手册

 浏览型号MTD5P06VT4G的Datasheet PDF文件第2页浏览型号MTD5P06VT4G的Datasheet PDF文件第3页浏览型号MTD5P06VT4G的Datasheet PDF文件第4页浏览型号MTD5P06VT4G的Datasheet PDF文件第5页浏览型号MTD5P06VT4G的Datasheet PDF文件第6页浏览型号MTD5P06VT4G的Datasheet PDF文件第7页 
MTD5P06V  
Preferred Device  
Power MOSFET  
5 A, 60 V, P−Channel DPAK  
This Power MOSFET is designed to withstand high energy in the  
avalanche and commutation modes. Designed for low voltage, high  
speed switching applications in power supplies, converters and power  
motor controls, these devices are particularly well suited for bridge  
circuits where diode speed and commutating safe operating areas are  
critical and offer additional safety margin against unexpected voltage  
transients.  
http://onsemi.com  
V
R
DS(on)  
TYP  
I MAX  
D
(BR)DSS  
60 V  
340 mW  
5.0 A  
Features  
• Avalanche Energy Specified  
P−Channel  
• I  
and V  
Specified at Elevated Temperature  
DSS  
DS(on)  
D
• Pb−Free Packages are Available  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
G
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
Drain−to−Source Voltage  
V
DSS  
DGR  
S
Drain−to−Gate Voltage (R = 1.0 MW)  
V
V
60  
GS  
Gate−to−Source Voltage  
− Continuous  
MARKING  
DIAGRAM  
V
15  
25  
Vdc  
Vpk  
GS  
− Non−repetitive (t ≤ 10 ms)  
p
GSM  
Drain Current − Continuous @ 25°C  
− Continuous @ 100°C  
I
I
5
4
18  
Adc  
Apk  
D
D
4
Drain  
4
− Single Pulse (t ≤ 10 ms)  
I
p
DM  
Total Power Dissipation @ 25°C  
Derate above 25°C  
P
40  
0.27  
W
W/°C  
W
DPAK  
CASE 369C  
STYLE 2  
D
2
3
1
Total Power Dissipation @ T = 25°C (Note 2)  
2.1  
A
Operating and Storage Temperature Range  
T , T  
−55 to  
175  
°C  
J
stg  
2
1
Gate  
3
Drain  
Source  
Single Pulse Drain−to−Source Avalanche  
E
125  
mJ  
°C/W  
°C  
AS  
Energy − Starting T = 25°C  
J
(V = 25 Vdc, V = 10 Vdc, Peak  
DD  
GS  
I = 5 Apk, L = 10 mH, R = 25 W)  
L
G
Y
WW  
= Year  
= Work Week  
5P06V = Device Code  
= Pb−Free Package  
Thermal Resistance  
Junction−to−Case  
R
R
R
3.75  
100  
71.4  
q
JC  
JA  
JA  
Junction−to−Ambient (Note 1)  
Junction−to−Ambient (Note 2)  
q
q
G
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from Case for 10 seconds  
T
260  
L
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. When surface mounted to an FR4 board using the minimum recommended  
pad size.  
†
Device  
Package  
Shipping  
MTD5P06V  
DPAK  
DPAK  
75 Units/Rail  
MTD5P06VT4  
2500/Tape & Reel  
2500/Tape & Reel  
MTD5P06VT4G  
DPAK  
2. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 6  
MTD5P06V/D  
 
12345678

中文翻译

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MTD5P06VT4G 替代型号

型号 品牌 替代类型 描述 数据表
MTD5P06VT4 ONSEMI

类似代替

 功率 MOSFET，-60V，-5A，450mΩ，单 P 沟道，DPAK
MTD6N20ET4G ONSEMI

类似代替

 Power MOSFET 6 Amps, 200 Volts N−Channel DPAK

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