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MTD6N20ET5G PDF预览

MTD6N20ET5G

更新时间： 2024-09-12 21:21:55
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
7页 126K
描述
6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3

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MTD6N20ET5G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.66雪崩能效等级（Eas）：54 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (ID)：6 A
最大漏源导通电阻：0.7 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：18 A认证状态：Not Qualified
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MTD6N20ET5G 数据手册

 浏览型号MTD6N20ET5G的Datasheet PDF文件第2页浏览型号MTD6N20ET5G的Datasheet PDF文件第3页浏览型号MTD6N20ET5G的Datasheet PDF文件第4页浏览型号MTD6N20ET5G的Datasheet PDF文件第5页浏览型号MTD6N20ET5G的Datasheet PDF文件第6页浏览型号MTD6N20ET5G的Datasheet PDF文件第7页 
MTD6N20E  
Power MOSFET  
6 A, 200 V, N−Channel DPAK  
This advanced Power MOSFET is designed to withstand high  
energy in the avalanche and commutation modes. The new energy  
efficient design also offers a drain−to−source diode with a fast  
recovery time. Designed for low voltage, high speed switching  
applications in power supplies, converters and PWM motor controls,  
these devices are particularly well suited for bridge circuits where  
diode speed and commutating safe operating areas are critical and  
offer additional safety margin against unexpected voltage transients.  
http://onsemi.com  
6 AMPERES, 200 VOLTS  
RDS(on) = 460 mW  
Features  
N−Channel  
• Avalanche Energy Specified  
D
• Source−to−Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
• Diode is Characterized for Use in Bridge Circuits  
G
• I  
and V  
Specified at Elevated Temperature  
DSS  
DS(on)  
• These Devices are Pb−Free and are RoHS Compliant  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol Value  
Unit  
Vdc  
Vdc  
MARKING  
DIAGRAMS  
Drain−to−Source Voltage  
V
200  
200  
DSS  
DGR  
Drain−to−Gate Voltage (R = 1.0 MW)  
V
GS  
4 Drain  
Gate−to−Source Voltage  
− Continuous  
4
V
GSM  
20  
40  
Vdc  
Vpk  
GS  
DPAK  
CASE 369C  
STYLE 2  
V
− Non−repetitive (t ≤ 10 ms)  
p
2
1
Drain Current  
− Continuous  
3
I
D
DM  
6.0  
3.8  
18  
Adc  
Apk  
D
I
− Continuous @ 100°C  
2
1
Gate  
3
I
− Single Pulse (t ≤ 10 ms)  
Drain  
p
Source  
Total Power Dissipation  
Derate above 25°C  
Total Power Dissipation @ T = 25°C (Note 2)  
P
50  
0.4  
W
W/°C  
W
D
6N20E Device Code  
Y
= Year  
= Work Week  
= Pb−Free Package  
1.75  
A
WW  
G
Operating and Storage Temperature Range  
T , T  
J
−55 to  
150  
°C  
stg  
Single Pulse Drain−to−Source Avalanche  
E
AS  
54  
mJ  
Energy − Starting T = 25°C  
J
ORDERING INFORMATION  
(V = 80 Vdc, V = 10 Vdc,  
DD  
GS  
I = 6.0 Apk, L = 3.0 mH, R = 25 W)  
†
L
G
Device  
MTD6N20ET4G  
Package  
Shipping  
Thermal Resistance − Junction−to−Case  
− Junction−to−Ambient (Note 1)  
− Junction−to−Ambient (Note 2)  
R
R
R
2.50  
100  
°C/W  
°C  
q
JC  
JA  
JA  
DPAK  
(Pb−Free)  
2500 / Tape &  
Reel  
q
q
71.4  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Maximum Temperature for Soldering  
Purposes, 1/8″ from case for 10 secs  
T
260  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. When surface mounted to an FR4 board using the minimum recommended  
pad size.  
2. When surface mounted to an FR4 board using the 0.5 sq. in. drain pad size.  
*For additional information on our Pb−Free strategy and soldering details,  
please download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
April, 2013 − Rev. 6  
MTD6N20E/D  
 
1234567

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