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MTD6N20ET4 PDF预览

MTD6N20ET4

更新时间： 2024-09-12 05:50:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
9页 85K
描述
Power MOSFET 6 Amps, 200 Volts N−Channel DPAK

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MTD6N20ET4 技术参数

是否无铅： 含铅生命周期：End Of Life
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：compliant风险等级：5.13
雪崩能效等级（Eas）：54 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (Abs) (ID)：6 A最大漏极电流 (ID)：6 A
最大漏源导通电阻：0.7 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：50 W最大脉冲漏极电流 (IDM)：18 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MTD6N20ET4 数据手册

 浏览型号MTD6N20ET4的Datasheet PDF文件第2页浏览型号MTD6N20ET4的Datasheet PDF文件第3页浏览型号MTD6N20ET4的Datasheet PDF文件第4页浏览型号MTD6N20ET4的Datasheet PDF文件第5页浏览型号MTD6N20ET4的Datasheet PDF文件第6页浏览型号MTD6N20ET4的Datasheet PDF文件第7页 
MTD6N20E  
Preferred Device  
Power MOSFET  
6 Amps, 200 Volts  
N−Channel DPAK  
This advanced Power MOSFET is designed to withstand high  
energy in the avalanche and commutation modes. The new energy  
efficient design also offers a drain−to−source diode with a fast  
recovery time. Designed for low voltage, high speed switching  
applications in power supplies, converters and PWM motor controls,  
these devices are particularly well suited for bridge circuits where  
diode speed and commutating safe operating areas are critical and  
offer additional safety margin against unexpected voltage transients.  
http://onsemi.com  
6 AMPERES, 200 VOLTS  
RDS(on) = 460 mW  
N−Channel  
D
Features  
• Avalanche Energy Specified  
• Source−to−Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
• Diode is Characterized for Use in Bridge Circuits  
G
• I  
and V  
Specified at Elevated Temperature  
DSS  
DS(on)  
S
• Pb−Free Package is Available*  
MARKING  
DIAGRAMS  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol Value  
Unit  
Vdc  
Vdc  
Drain−to−Source Voltage  
V
200  
200  
4 Drain  
DSS  
DGR  
Drain−to−Gate Voltage (R = 1.0 MW)  
V
GS  
4
DPAK  
CASE 369C  
STYLE 2  
Gate−to−Source Voltage  
− Continuous  
V
20  
40  
Vdc  
Vpk  
GS  
2
1
V
GSM  
− Non−repetitive (t ≤ 10 ms)  
p
3
Drain Current  
− Continuous  
− Continuous @ 100°C  
− Single Pulse (t ≤ 10 ms)  
2
1
Gate  
3
I
I
6.0  
3.8  
18  
Adc  
Apk  
D
D
Drain  
Source  
I
DM  
p
Total Power Dissipation  
Derate above 25°C  
Total Power Dissipation @ T = 25°C (Note 2)  
P
50  
0.4  
1.75  
W
W/°C  
W
4
D
4 Drain  
A
DPAK  
CASE 369D  
STYLE 2  
Operating and Storage Temperature Range  
T , T  
J
−55 to  
150  
°C  
stg  
1
2
Single Pulse Drain−to−Source Avalanche  
E
54  
mJ  
AS  
3
Energy − Starting T = 25°C  
J
(V = 80 Vdc, V = 10 Vdc,  
DD  
GS  
I = 6.0 Apk, L = 3.0 mH, R = 25 W)  
L
G
1
2
3
Gate Drain Source  
6N20E Device Code  
Thermal Resistance − Junction−to−Case  
− Junction−to−Ambient (Note 1)  
− Junction−to−Ambient (Note 2)  
R
R
R
2.50  
100  
71.4  
°C/W  
°C  
q
JC  
JA  
JA  
Y
= Year  
q
q
WW  
G
= Work Week  
= Pb−Free Package  
Maximum Temperature for Soldering  
T
260  
L
Purposes, 1/8″ from case for 10 secs  
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. When surface mounted to an FR4 board using the minimum recommended  
pad size.  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
2. When surface mounted to an FR4 board using the 0.5 sq. in. drain pad size.  
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 − Rev. 3  
MTD6N20E/D  
 
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中文翻译

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MTD6N20ET4 替代型号

型号 品牌 替代类型 描述 数据表
MTD6N20ET4G ONSEMI

类似代替

 Power MOSFET 6 Amps, 200 Volts N−Channel DPAK
MTD5P06VT4G ONSEMI

功能相似

 功率 MOSFET，-60V，-5A，450mΩ，单 P 沟道，DPAK

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