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MTD15N06VT4 PDF预览

MTD15N06VT4

更新时间： 2024-09-17 14:53:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 218K
描述
15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3

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MTD15N06VT4 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
针数：3Reach Compliance Code：unknown
风险等级：5.17其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：113 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：14 A最大漏极电流 (ID)：15 A
最大漏源导通电阻：0.12 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：60 pFJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL功耗环境最大值：55 W
最大功率耗散 (Abs)：55 W最大脉冲漏极电流 (IDM)：45 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：110 ns最大开启时间（吨）：120 ns
Base Number Matches：1

MTD15N06VT4 数据手册

 浏览型号MTD15N06VT4的Datasheet PDF文件第2页浏览型号MTD15N06VT4的Datasheet PDF文件第3页浏览型号MTD15N06VT4的Datasheet PDF文件第4页浏览型号MTD15N06VT4的Datasheet PDF文件第5页浏览型号MTD15N06VT4的Datasheet PDF文件第6页浏览型号MTD15N06VT4的Datasheet PDF文件第7页 
Order this document  
by MTD15N06V/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
TMOS POWER FET  
15 AMPERES  
60 VOLTS  
N–Channel Enhancement–Mode Silicon Gate  
TMOS V is a new technology designed to achieve an on–resis-  
tance area product about one–half that of standard MOSFETs. This  
new technology more than doubles the present cell density of our  
50 and 60 volt TMOS devices. Just as with our TMOS E–FET  
designs, TMOS V is designed to withstand high energy in the  
avalanche and commutation modes. Designed for low voltage, high  
speed switching applications in power supplies, converters and  
power motor controls, these devices are particularly well suited for  
bridge circuits where diode speed and commutating safe operating  
areas are critical and offer additional safety margin against  
unexpected voltage transients.  
R
= 0.12 OHM  
DS(on)  
TM  
D
New Features of TMOS V  
•
On–resistance Area Product about One–half that of Standard  
MOSFETs with New Low Voltage, Low R Technology  
G
CASE 369A–13, Style 2  
DPAK Surface Mount  
DS(on)  
Faster Switching than E–FET Predecessors  
•
S
Features Common to TMOS V and TMOS E–FETS  
•
•
•
•
Avalanche Energy Specified  
and V Specified at Elevated Temperature  
I
DSS  
DS(on)  
Static Parameters are the Same for both TMOS V and TMOS E–FET  
Surface Mount Package Available in 16 mm 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
V
DSS  
Drain–Gate Voltage (R  
= 1.0 MΩ)  
Gate–Source Voltage — Continuous  
V
DGR  
60  
GS  
V
± 20  
± 25  
Vdc  
Vpk  
GS  
Gate–Source Voltage — Single Pulse (t ≤ 50 ms)  
V
GSM  
p
Drain Current — Continuous @ 25°C  
Drain Current — Continuous @ 100°C  
I
I
15  
8.7  
45  
Adc  
D
D
Drain Current — Single Pulse (t ≤ 10 µs)  
I
Apk  
p
DM  
Total Power Dissipation @ 25°C  
Derate above 25°C  
P
D
55  
0.36  
2.1  
Watts  
W/°C  
Watts  
Total Power Dissipation @ T = 25°C, when mounted to minimum recommended pad size  
A
Operating and Storage Temperature Range  
T , T  
stg  
–55 to 175  
113  
°C  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 25 Vdc, V = 10 Vdc, I = 15 Apk, L = 1.0 mH, R = 25 Ω)  
GS L G  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
Thermal Resistance — Junction to Ambient, when mounted to minimum recommended pad size  
R
θJC  
R
θJA  
R
θJA  
2.73  
100  
71.4  
°C/W  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1996  
1234567...10

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