Datasheet > MTD190P10E3

MTD190P10E3

更新时间： 2024-09-18 01:21:35

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
8页	447K
描述
P-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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MTD190P10E3 数据手册

Spec. No. : C108E3

Issued Date : 2018.05.02

Revised Date :

CYStech Electronics Corp.

Page No. : 1/ 8

P-Channel Enhancement Mode Power MOSFET

BV^DSS

ID@VGS=-10V, TC=25°C

RDS(ON)@VGS=-10V, ID=-8A

-100V

-12A

MTD190P10E3

194mΩ(typ)

Features

• Low Gate Charge

• Simple Drive Requirement

• Pb-free Lead Plating Package

Equivalent Circuit

Outline

TO-220

MTD190P10E3

G：Gate

D：Drain

S：Source

G D S

Ordering Information

Device

Shipping

Package

TO-220

(RoHS compliant)

MTD190P10E3-0-UB-X

50 pcs/tube, 20 tubes/box, 4 boxes / carton

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, UB : 50 pcs / tube, 20 tubes/box

Product rank, zero for no rank products

Product name

MTD190P10E3

Preliminary

CYStek Product Specification

12 3 4 5 6 7 8

中文翻译

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与MTD190P10E3相关器件

型号	品牌	获取价格	描述	数据表
MTD190P10E3-0-UB-X	CYSTEKEC	获取价格	P-Channel Enhancement Mode Power MOSFET
MTD190P10J3	CYSTEKEC	获取价格	P-Channel Enhancement Mode Power MOSFET
MTD190P10J3-0-T3-G	CYSTEKEC	获取价格	P-Channel Enhancement Mode Power MOSFET
MTD190P10L3	CYSTEKEC	获取价格	P-Channel Enhancement Mode Power MOSFET
MTD190P10L3-0-T3-G	CYSTEKEC	获取价格	P-Channel Enhancement Mode Power MOSFET
MTD1N40	MOTOROLA	获取价格	POWER FIELD EFFECT TRANSISTOR
MTD1N40-1	MOTOROLA	获取价格	Power Field-Effect Transistor, 1A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o
MTD1N40T4	MOTOROLA	获取价格	1A, 400V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
MTD1N45	MOTOROLA	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
MTD1N45-1	MOTOROLA	获取价格	1 A, 450 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251