Datasheet > MTD190P10L3

MTD190P10L3

更新时间： 2024-09-18 01:20:11

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	477K
描述
P-Channel Enhancement Mode Power MOSFET

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数据手册

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MTD190P10L3 数据手册

Spec. No. : C108L3

Issued Date : 2016.01.11

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

P-Channel Enhancement Mode Power MOSFET

MTD190P10L3

BVDSS

-100V

-2.2A

ID @ TA=25°C, VGS=-10V

190mΩ (typ)

217mΩ (typ)

RDSON@VGS=-10V, ID=-2A

RDSON@VGS=-4.5V, ID=-1A

Features

• Low Gate Charge

• Simple Drive Requirement

• Pb-free lead plating & Halogen-free package

Equivalent Circuit

Outline

SOT-223

MTD190P10L3

G：Gate D：Drain

S：Source

Ordering Information

Device

Package

SOT-223

Shipping

2500 pcs / Tape & Reel

MTD190P10L3-0-T3-G

(Pb-free lead plating & Halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T3 : 2500 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

MTD190P10L3

CYStek Product Specification

12 3 4 5 6 7...9

中文翻译

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与MTD190P10L3相关器件

型号	品牌	获取价格	描述	数据表
MTD190P10L3-0-T3-G	CYSTEKEC	获取价格	P-Channel Enhancement Mode Power MOSFET
MTD1N40	MOTOROLA	获取价格	POWER FIELD EFFECT TRANSISTOR
MTD1N40-1	MOTOROLA	获取价格	Power Field-Effect Transistor, 1A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o
MTD1N40T4	MOTOROLA	获取价格	1A, 400V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
MTD1N45	MOTOROLA	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
MTD1N45-1	MOTOROLA	获取价格	1 A, 450 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
MTD1N45T4	MOTOROLA	获取价格	Power Field-Effect Transistor, 1A I(D), 450V, 8ohm, 1-Element, N-Channel, Silicon, Metal-o
MTD1N50	MOTOROLA	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
MTD1N50-1	MOTOROLA	获取价格	Power Field-Effect Transistor, 1A I(D), 500V, 8ohm, 1-Element, N-Channel, Silicon, Metal-o
MTD1N50E	MOTOROLA	获取价格	TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM