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MTD1P40E PDF预览

MTD1P40E

更新时间： 2024-09-17 14:53:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 开关脉冲晶体管
页数 文件大小 规格书
10页 182K
描述
1A, 400V, 8ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3

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MTD1P40E 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
针数：3Reach Compliance Code：unknown
风险等级：5.16雪崩能效等级（Eas）：45 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：400 V最大漏极电流 (Abs) (ID)：1 A
最大漏极电流 (ID)：1 A最大漏源导通电阻：8 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：65 W
最大脉冲漏极电流 (IDM)：3.5 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MTD1P40E 数据手册

 浏览型号MTD1P40E的Datasheet PDF文件第2页浏览型号MTD1P40E的Datasheet PDF文件第3页浏览型号MTD1P40E的Datasheet PDF文件第4页浏览型号MTD1P40E的Datasheet PDF文件第5页浏览型号MTD1P40E的Datasheet PDF文件第6页浏览型号MTD1P40E的Datasheet PDF文件第7页 
Order this document  
by MTD1P40E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
TMOS POWER FET  
1.0 AMPERES  
400 VOLTS  
P–Channel Enhancement–Mode Silicon Gate  
This high voltage MOSFET uses an advanced termination  
scheme to provide enhanced voltage–blocking capability without  
degrading performance over time. In addition, this advanced TMOS  
E–FET is designed to withstand high energy in the avalanche and  
commutation mode. The new energy efficient design also offers a  
drain–to–soure diode with fast recovery time. Designed for high  
converters and PWM motor controls, these devices are particularly  
well suited for low power flourescent lighting applications where  
R
= 8.0 OHM  
DS(on)  
D
V
andR  
havebeenoptimizedforusewithcomplimentary  
DSS  
N–Channel devices.  
DS(on)  
G
CASE 369A–13, Style 2  
DPAK  
•
•
•
Robust High Voltage Termination  
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
S
•
Diode is Characterized for Use in Bridge Circuits  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
Unit  
Drain–Source Voltage  
V
400  
Vdc  
Vdc  
DSS  
Drain–Gate Voltage (R  
= 1.0 MΩ)  
Gate–Source Voltage — Continuous  
V
DGR  
400  
GS  
V
± 20  
± 25  
Vdc  
Vpk  
GS  
Gate–Source Voltage — Single Pulse (t ≤ 50 µs)  
V
GSM  
p
Drain Current — Continuous  
Drain Current — Continuous @ 100°C  
Drain Current — Single Pulse (t ≤ 10 µs)  
I
I
1.0  
0.8  
3.5  
Adc  
Apk  
D
D
I
p
DM  
Total Power Dissipation  
Derate above 25°C  
P
D
65  
0.53  
1.75  
Watts  
W/°C  
Watts  
Total Power Dissipation @ T = 25°C, when mounted with the minimum recommended pad size  
C
Operating and Storage Temperature Range  
T , T  
J stg  
–55 to 150  
°C  
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T <150°C)  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
45  
mJ  
J
(V  
DD  
= 100 Vdc, V  
= 10 Vdc, I = 3.0 Apk, L = 10 mH, R = 25 Ω)  
GS L G  
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
Thermal Resistance — Junction to Ambient  
R
R
R
1.91  
100  
71.4  
°C/W  
°C  
θJC  
θJA  
θJA  
(1)  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds  
T
260  
L
(1) When surface mounted to an FR4 board using the minimum recommended pad size.  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1998  
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