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MTD1N50E PDF预览

MTD1N50E

更新时间： 2024-09-17 20:33:55
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 118K
描述
1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3

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中文翻译

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MTD1N50E 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.1Is Samacsys：N
雪崩能效等级（Eas）：45 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：500 V
最大漏极电流 (Abs) (ID)：1 A最大漏极电流 (ID)：1 A
最大漏源导通电阻：5 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：40 W
最大脉冲漏极电流 (IDM)：3 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MTD1N50E 数据手册

 浏览型号MTD1N50E的Datasheet PDF文件第2页浏览型号MTD1N50E的Datasheet PDF文件第3页浏览型号MTD1N50E的Datasheet PDF文件第4页浏览型号MTD1N50E的Datasheet PDF文件第5页浏览型号MTD1N50E的Datasheet PDF文件第6页浏览型号MTD1N50E的Datasheet PDF文件第7页 
MTD1N50E  
Preferred Device  
Power MOSFET  
1 Amp, 500 Volts  
N–Channel DPAK  
This high voltage MOSFET uses an advanced termination scheme  
to provide enhanced voltage–blocking capability without degrading  
performance over time. In addition this advanced high voltage  
MOSFET is designed to withstand high energy in the avalanche and  
commutation modes. The energy efficient design also offers a  
drain–to–source diode with a fast recovery time. Designed for high  
voltage, high speed switching applications in power supplies,  
converters and PWM motor controls, these devices are particularly  
well suited for bridge circuits where diode speed and commutating  
safe operating areas are critical and offer additional safety margin  
against unexpected voltage transients.  
http://onsemi.com  
1 AMPERE  
500 VOLTS  
R
= 5 Ω  
DS(on)  
N–Channel  
D
• Robust High Voltage Termination  
• Avalanche Energy Specified  
• Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
G
• Diode is Characterized for Use in Bridge Circuits  
S
• I  
and V Specified at Elevated Temperature  
DSS  
DS(on)  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
Unit  
4
Drain–to–Source Voltage  
V
500  
Vdc  
YWW  
T
1N50E  
DSS  
CASE 369A  
DPAK  
STYLE 2  
Drain–to–Gate Voltage (R  
= 1.0 MΩ)  
V
DGR  
500  
Vdc  
GS  
2
3
1
Gate–to–Source Voltage  
– Continuous  
V
±20  
±40  
Vdc  
Vpk  
GS  
Y
WW  
T
= Year  
= Work Week  
= MOSFET  
– Non–repetitive (t ≤ 10 ms)  
V
GSM  
p
Drain Current – Continuous  
I
D
I
D
1.0  
0.8  
3.0  
Adc  
Apk  
– Continuous @ 100°C  
– Single Pulse (t ≤ 10 µs)  
I
p
DM  
PIN ASSIGNMENT  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
40  
0.32  
1.75  
Watts  
W/°C  
Watts  
4
C
Drain  
Total Power Dissipation @ T = 25°C, when  
A
mounted to minimum recommended pad  
size  
Operating and Storage Temperature  
Range  
T , T  
J stg  
–55 to  
150  
°C  
1
2
3
Single Pulse Drain–to–Source Avalanche  
E
AS  
45  
mJ  
Gate  
Drain Source  
Energy – Starting T = 25°C  
J
(V  
= 100 Vdc, V  
= 10 Vdc,  
DD  
GS  
= 3.0 Apk, L = 10 mH, R = 25 Ω)  
ORDERING INFORMATION  
I
L
G
Device  
Package  
DPAK  
Shipping  
75 Units/Rail  
Thermal Resistance  
– Junction to Case  
– Junction to Ambient  
– Junction to Ambient, when mounted to  
minimum recommended pad size  
°C/W  
°C  
R
R
R
3.13  
100  
71.4  
θJC  
θJA  
θJA  
MTD1N50E  
MTD1N50E1  
MTD1N50ET4  
DPAK  
75 Units/Rail  
DPAK  
2500 Tape & Reel  
Maximum Temperature for Soldering  
Purposes, 1/8″ from case for 10  
seconds  
T
260  
L
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 2  
MTD1N50E/D  
1234567...12

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与MTD1N50E相关器件

型号 品牌 获取价格 描述 数据表
MTD1N50E1 MOTOROLA

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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
MTD1N50EG ONSEMI

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 		1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, GREEN, DPAK-3
MTD1N50ET4 ONSEMI

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 		1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
MTD1N50T4 MOTOROLA

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 		1A, 500V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
MTD1N60E MOTOROLA

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 		TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM
MTD1N60ET4 MOTOROLA

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 		1A, 600V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
MTD1N80E MOTOROLA

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 		TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
MTD1N80ET4 MOTOROLA

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 		1A, 800V, 12ohm, N-CHANNEL, Si, POWER, MOSFET
MTD1P40E ONSEMI

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 		1A, 400V, 8ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3
MTD1P40E MOTOROLA

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 		1A, 400V, 8ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3

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