Datasheet > MTD190P06KN3

MTD190P06KN3

更新时间： 2024-09-18 01:21:51

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	724K
描述
P-Channel Enhancement Mode MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MTD190P06KN3 数据手册

Spec. No. : C106N3

Issued Date : 2018.11.20

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

-60V P-Channel Enhancement Mode MOSFET

BVDSS

ID @ VGS=-10V, T =25°C

RDSON@VGS=-10V, ID=-2A

RDSON@VGS=-4.5V,ID=-1A

-60V

-2.2A

MTD190P06KN3

165mΩ(typ)

270mΩ(typ)

Features

• Low gate charge

• Compact and low profile SOT-23 package

• Advanced trench process technology

• High density cell design for ultra low on resistance

• ESD protected gate

• Pb-free lead plating package

Symbol

Outline

SOT-23

MTD190P06KN3

G：Gate S：Source D：Drain

Ordering Information

Device

Package

Shipping

3000 pcs / tape & reel

SOT-23

MTD190P06KN3-0-T1-G

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T1 : 3000 pcs / tape & reel, 7” reel

Product rank, zero for no rank products

Product name

MTD190P06KN3

CYStek Product Specification

12 3 4 5 6 7...9

中文翻译

下载PDF

与MTD190P06KN3相关器件

型号	品牌	获取价格	描述	数据表
MTD190P06KN3-0-T1-G	CYSTEKEC	获取价格	P-Channel Enhancement Mode MOSFET
MTD190P10E3	CYSTEKEC	获取价格	P-Channel Enhancement Mode Power MOSFET
MTD190P10E3-0-UB-X	CYSTEKEC	获取价格	P-Channel Enhancement Mode Power MOSFET
MTD190P10J3	CYSTEKEC	获取价格	P-Channel Enhancement Mode Power MOSFET
MTD190P10J3-0-T3-G	CYSTEKEC	获取价格	P-Channel Enhancement Mode Power MOSFET
MTD190P10L3	CYSTEKEC	获取价格	P-Channel Enhancement Mode Power MOSFET
MTD190P10L3-0-T3-G	CYSTEKEC	获取价格	P-Channel Enhancement Mode Power MOSFET
MTD1N40	MOTOROLA	获取价格	POWER FIELD EFFECT TRANSISTOR
MTD1N40-1	MOTOROLA	获取价格	Power Field-Effect Transistor, 1A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o
MTD1N40T4	MOTOROLA	获取价格	1A, 400V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252