Datasheet > MRF9060LSR1

MRF9060LSR1

更新时间： 2024-10-01 04:14:39

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	228K
描述
RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs

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MRF9060LSR1 数据手册

MRF9060

Rev. 8, 12/2004

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N−Channel Enhancement−Mode Lateral MOSFETs

MRF9060LR1

MRF9060LSR1

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large−signal, common−source amplifier applica-

tions in 26 volt base station equipment.

• Typical Two−Tone Performance at 945 MHz, 26 Volts

Output Power — 60 Watts PEP

Power Gain — 17 dB

945 MHz, 60 W, 26 V

LATERAL N−CHANNEL

BROADBAND

Efficiency — 40%

IMD — −31 dBc

• Integrated ESD Protection

RF POWER MOSFETs

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large−Signal Impedance Parameters

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.

CASE 360B−05, STYLE 1

NI−360

MRF9060LR1

CASE 360C−05, STYLE 1

NI−360S

MRF9060LSR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain−Source Voltage

Gate−Source Voltage

−0.5, +65

−0.5, +15

Vdc

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

MRF9060LR1

159

0.91

219

W/°C

MRF9060LSR1

1.25

W/°C

Storage Temperature Range

−65 to +150

°C

stg

Operating Junction Temperature

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

MRF9060LR1

MRF9060LSR1

1.1

0.8

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

M1 (Minimum)

Machine Model

NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF9060LR1 MRF9060LSR1

RF Device Data

Freescale Semiconductor

5−1

12 3 4 5 6 7...12

中文翻译

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与MRF9060LSR1相关器件

型号	品牌	获取价格	描述	数据表
MRF9060LSR1_08	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9060MBR1	MOTOROLA	获取价格	The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode
MRF9060MR1	MOTOROLA	获取价格	The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode
MRF9060NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF9060NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF9060NR1_09	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9060R1	MOTOROLA	获取价格	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF9060S	MOTOROLA	获取价格	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF9060SR1	MOTOROLA	获取价格	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF9080	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS

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