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MRF8P20165WHR3 PDF预览

MRF8P20165WHR3

更新时间： 2024-02-16 04:17:04
品牌 Logo 应用领域
恩智浦 - NXP 局域网放大器晶体管
页数 文件大小 规格书
16页 802K
描述
RF Power Field Effect Transistors

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MRF8P20165WHR3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred包装说明：FLANGE MOUNT, R-CDFM-F4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.29.00.75
风险等级：5.21Is Samacsys：N
外壳连接：SOURCE配置：COMMON SOURCE, 2 ELEMENTS
最小漏源击穿电压：65 VFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：S BANDJESD-30 代码：R-CDFM-F4
元件数量：2端子数量：4
工作模式：ENHANCEMENT MODE最高工作温度：125 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

MRF8P20165WHR3 数据手册

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Document Number: MRF8P20165WH  
Rev. 0, 4/2011  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N--Channel Enhancement--Mode Lateral MOSFETs  
MRF8P20165WHR3  
MRF8P20165WHSR3  
Designed for base station applications with wide instantaneous bandwidth  
requirements covering frequencies from 1880 to 2025 MHz.  
•
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,  
IDQA = 550 mA, VGSB = 1.3 Vdc, Pout = 37 Watts Avg., IQ Magnitude  
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB  
@ 0.01% Probability on CCDF.  
1930--1995 MHz, 37 W AVG., 28 V  
SINGLE W--CDMA  
G
(dB)  
η
(%)  
Output PAR  
(dB)  
ACPR  
(dBc)  
ps  
D
LATERAL N--CHANNEL  
RF POWER MOSFETs  
Frequency  
1930 MHz  
1960 MHz  
1995 MHz  
16.1  
16.3  
16.3  
47.0  
47.7  
46.0  
7.1  
7.1  
7.0  
--27.7  
--29.7  
--33.3  
•
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW  
Output Power (2 dB Input Overdrive from Rated Pout  
Typical Pout @ 3 dB Compression Point ≃ 190 Watts (1)  
)
Features  
CASE 465M--01, STYLE 1  
N I -- 7 8 0 -- 4  
•
•
•
•
•
Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃ 100 MHz.  
Designed for Wideband Applications that Require 65 MHz Signal Bandwidth  
Production Tested in a Symmetrical Doherty Configuration  
100% PAR Tested for Guaranteed Output Power Capability  
Characterized with Large--Signal Load--Pull Parameters and Common  
Source S--Parameters  
MRF8P20165WHR3  
•
•
•
Internally Matched for Ease of Use  
Integrated ESD Protection  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
Designed for Digital Predistortion Error Correction Systems  
RoHS Compliant  
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,  
13 inch Reel. For R5 Tape and Reel option, see p. 15.  
CASE 465H--02, STYLE 1  
NI--780S--4  
MRF8P20165WHSR3  
•
•
•
•
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,  
13 inch Reel. For R5 Tape and Reel option, see p. 15.  
RF /V  
RF /V  
outA DSA  
3
4
1
2
inA GSA  
Table 1. Maximum Ratings  
Rating  
Drain--Source Voltage  
Symbol  
Value  
--0.5, +65  
--6.0, +10  
32, +0  
Unit  
Vdc  
Vdc  
Vdc  
°C  
RF /V  
inB GSB  
RF /V  
outB DSB  
V
DSS  
Gate--Source Voltage  
V
V
GS  
DD  
Operating Voltage  
(Top View)  
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
stg  
--65 to +150  
125  
T
C
°C  
Figure 1. Pin Connections  
(2)  
T
J
225  
°C  
Table 2. Thermal Characteristics  
(3)  
Characteristic  
Symbol  
Value  
Unit  
°C/W  
Thermal Resistance, Junction to Case  
R
θ
JC  
Case Temperature 80°C, 37 W CW, 28 Vdc, I  
Case Temperature 114°C, 160 W CW, 28 Vdc, I  
= 550 mA, V  
= 1.3 Vdc, 1960 MHz  
GSB  
0.79  
0.53  
DQA  
= 550 mA, V  
= 1.3 Vdc, 1960 MHz  
DQA  
GSB  
1. P3dB = P  
+ 7.0 dB where P  
is the average output power measured using an unclipped W--CDMA single--carrier input signal where  
avg  
avg  
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.  
2. Continuous use at maximum temperature will affect MTTF.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
© Freescale Semiconductor, Inc., 2011. All rights reserved.  
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