Datasheet > MRF8S18260H

MRF8S18260H

更新时间： 2024-01-24 07:51:25

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
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描述
RF Power Field Effect Transistors

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数据手册

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MRF8S18260H 数据手册

Document Number: MRF8S18260H

Rev. 1, 2/2012

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MRF8S18260HR6

MRF8S18260HSR6

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA and multicarrier base station applications with

frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

all typical cellular base station modulation formats.

•

Typical Single--Carrier W--CDMA Performance: V_DD= 30 Volts, I_DQ

1600 mA, P_out= 74 Watts Avg., IQ Magnitude Clipping, Channel

1805--1880 MHz, 74 W AVG., 30 V

SINGLE W--CDMA

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

LATERAL N--CHANNEL

RF POWER MOSFETs

Output PAR

(dB)

ACPR

(dBc)

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

17.9

(%)

31.6

31.9

32.5

6.0

5.9

--35.0

--36.0

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 374 Watts CW

Output Power (3 dB Input Overdrive from Rated P_out

Typical P_out@ 1 dB Compression Point ≃ 260 Watts CW

CASE 375I--04

NI--1230--8

MRF8S18260HR6

)

Features

•

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

•

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C Operation

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

CASE 375J--03

NI--1230S--8

MRF8S18260HSR6

In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

N.C.

RF /V

VBW

Symbol

Value

--0.5, +65

--6.0, +10

32, +0

Unit

Vdc

°C

RF /V

out DS

Drain--Source Voltage

Gate--Source Voltage

in GS

DSS

RF /V

in GS

RF /V

out DS

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

--65 to +150

150

VBW

N.C.

°C

(Top View)

(1,2)

225

°C

Figure 1. Pin Connections

CW Operation @ T = 25°C

420

3.5

W/°C

Derate above 25°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

°C/W

Thermal Resistance, Junction to Case

Case Temperature 81°C, 74 W CW, 30 Vdc, I

Case Temperature 88°C, 260 W CW , 30 Vdc, I = 1600 mA, 1805 MHz

= 1600 mA, 1805 MHz

0.27

0.26

(4)

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

MRF8S18260HR6 MRF8S18260HSR6

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...14

中文翻译

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与MRF8S18260H相关器件

型号	品牌	获取价格	描述	数据表
MRF8S18260HR6	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S18260HSR6	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S19140HR3	NXP	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 465-06, NI-780, 2 PIN
MRF8S19140HSR3	ROCHESTER	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 465A-06, NI-780, 2 PIN
MRF8S19140HSR3	NXP	获取价格	Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 34 W Avg., 28 V
MRF8S19260H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S19260HSR6	NXP	获取价格	2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 375J-02, NI-1230S
MRF8S21100HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8S21100HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8S21120HSR3	NXP	获取价格	W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V

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