Datasheet > MRF8S7170NR3

MRF8S7170NR3

更新时间： 2024-09-29 05:50:11

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描述
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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MRF8S7170NR3 数据手册

Document Number: MRF8S7170N

Rev. 0, 2/2010

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

MRF8S7170NR3

Designed for base station applications with frequencies from 728 to 768 MHz.

Can be used in Class AB and Class C for all typical cellular base station

modulation formats.

• Typical Single-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ

1200 mA, P_out= 50 Watts Avg., IQ Magnitude Clipping, Channel

728-768 MHz, 50 W AVG., 28 V

SINGLE W-CDMA

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

LATERAL N-CHANNEL

RF POWER MOSFET

Output PAR

(dB)

ACPR

(dBc)

Frequency

728 MHz

748 MHz

768 MHz

(dB)

19.7

19.5

19.4

(%)

37.1

37.0

37.9

6.2

6.1

-38.7

-37.5

-37.8

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW

Output Power (3 dB Input Overdrive from Rated P_out), Designed for

Enhanced Ruggedness

• Typical P_out@ 1 dB Compression Point ] 182 Watts CW

Features

CASE 2021-03, STYLE 1

OM-780-2

PLASTIC

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

and Common Source S-Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate-Source Voltage Range for Improved Class C Operation

• Designed for Digital Predistortion Error Correction Systems

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +70

-6.0, +10

32, +0

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Operating Voltage

DSS

Storage Temperature Range

Case Operating Temperature

stg

-65 to +150

150

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 170 W CW, 28 Vdc, I = 1200 mA

Case Temperature 81°C, 50 W CW, 28 Vdc, I = 1200 mA

°C/W

0.30

0.37

ꢀꢁ1. Continuous use at maximum temperature will affect MTTF.

ꢀꢁ2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

ꢀꢁ3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF8S7170NR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...13

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