Datasheet > MRF8S9202N_12

MRF8S9202N_12

更新时间： 2024-01-26 05:38:30

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
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RF Power Field Effect Transistors

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数据手册

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MRF8S9202N_12 数据手册

Document Number: MRF8S9260H

Rev. 1, 2/2012

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF8S9260HR3

MRF8S9260HSR3

Designed for CDMA and multicarrier GSM base station applications with

frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all

typical cellular base station modulation formats.



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Volts,

920--960 MHz, 75 W AVG., 28 V

SINGLE W--CDMA

_DQ= 1700 mA, P_out= 75 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

LATERAL N--CHANNEL

RF POWER MOSFETs



Output PAR

(dB)

ACPR

(dBc)

Frequency

920 MHz

940 MHz

960 MHz

(dB)

18.8

18.7

18.6

(%)

36.0

37.0

38.5

6.3

6.2

5.9

--39.5

--38.6

--37.1



Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW ⁽¹⁾

Output Power (3 dB Input Overdrive from Rated P_out), Designed for

Enhanced Ruggedness

CASE 465B--04

NI--880

MRF8S9260HR3

Typical P_out@ 1 dB Compression Point ≃ 260 Watts CW

Features



100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters



Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C Operation

Optimized for Doherty Applications

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465C--03

NI--880S

MRF8S9260HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +70

--6.0, +10

32, +0

Unit

Vdc

C

Drain--Source Voltage

DSS

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

--65 to +150

150

C

(2,3)

225

C

CW Operation @ T = 25C

Derate above 25C

280

1.5

W/C

Table 2. Thermal Characteristics

(3,4)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case



C/W

Case Temperature 80C, 75 W CW, 28 Vdc, I = 1800 mA

0.37

0.31

Case Temperature 80C, 265 W CW, 28 Vdc, I = 1100 mA

1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

2. Continuous use at maximum temperature will affect MTTF.

3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF8S9260HR3 MRF8S9260HSR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...14

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与MRF8S9202N_12相关器件

型号	品牌	获取价格	描述	数据表
MRF8S9202NR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S9220HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8S9220HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8S9232NR3	NXP	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, PLASTIC, CASE 2021-03, 2 PIN
MRF8S9260HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8S9260HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8VP13350GN	NXP	获取价格	RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V
MRF8VP13350N	NXP	获取价格	RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V
MRF9002NR2	FREESCALE	获取价格	RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET
MRF9002R2	MOTOROLA	获取价格	RF Power Field Effect Transistor Array

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