Datasheet > MRF9002RS

MRF9002RS

更新时间： 2024-02-05 03:08:54

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	294K
描述
RF POWER FIELD EFFECT TRANSISTOR ARRAY

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中文翻译

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数据手册

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MRF9002RS 数据手册

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF9002R2/D

The RF Sub–Micron MOSFET Line

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ꢎꢆꢏ ꢐ ꢑꢇꢑ ꢍꢃꢆ ꢒ ꢆ ꢆꢏ ꢓ

N–Channel Enhancement–Mode Lateral MOSFET

1.0 GHz, 2 W, 26 V

LATERAL N–CHANNEL

BROADBAND

Designed for broadband commercial and industrial applications with frequen-

cies to 1.0 GHz. The high gain and broadband performance of this device make

it ideal for large–signal, common–source amplifier applications in 26 volt base

station equipment.

RF POWER MOSFET

• Typical Performance at 960 MHz, 26 Volts

Output Power — 2 Watts Per Transistor

Power Gain — 18 dB

Efficiency — 50%

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW

CASE 978–03

PLASTIC

Output Power

• Excellent Thermal Stability

PFP–16

• Characterized with Series Equivalent Large–Signal

Impedance Parameters

PIN CONNECTIONS

• Available in Tape and Reel. R2 Suffix = 1,500 Units

per 16 mm, 13 inch Reel.

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NOTE: Exposed backside flag is source

terminal for transistors.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Watts

°C

Drain–Source Voltage

Gate–Source Voltage

DSS

–0.5, +15

Total Dissipation Per Transistor @ T = 25°C

Storage Temperature Range

stg

–65 to +150

150

Operating Junction Temperature

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case, Single Transistor

°C/W

MOISTURE SENSITIVITY LEVEL

Test Methodology

Rating

Per JESD 22–A113

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 3

MOTOROLA RF DEVICE DATA

MRF9002R2

 Motorola, Inc. 2002

12 3 4 5 6 7...12

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与MRF9002RS相关器件

型号	品牌	获取价格	描述	数据表
MRF901	ASI	获取价格	NPN SILICON RF TRANSISTOR
MRF9011	MOTOROLA	获取价格	The Rf Line NPN Silicon High-Frequency Transistor
MRF9011L	MOTOROLA	获取价格	The Rf Line NPN Silicon High-Frequency Transistor
MRF9011LT1	MOTOROLA	获取价格	NPN Silicon High-Frequency Transistor
MRF9011LT3	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
MRF9030	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9030	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9030_08	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9030D	FREESCALE	获取价格	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode
MRF9030D	MOTOROLA	获取价格	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode

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