Datasheet > MRF9030LR1

MRF9030LR1

更新时间： 2024-10-01 05:50:11

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描述
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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数据手册

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MRF9030LR1 数据手册

Document Number: MRF9030

Rev. 8, 9/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of this device

make it ideal for large-signal, common-source amplifier applications in 26 volt

base station equipment.

MRF9030LR1

• Typical Two-Tone Performance at 945 MHz, 26 Volts

Output Power — 30 Watts PEP

Power Gain — 19 dB

945 MHz, 30 W, 26 V

LATERAL N-CHANNEL

BROADBAND

Efficiency — 41.5%

IMD — -32.5 dBc

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW

RF POWER MOSFET

Output Power

Features

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

CASE 360B-05, STYLE 1

NI-360

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

- 0.5, +68

- 0.5, +15

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

0.53

W/°C

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

1.9

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

M1 (Minimum)

Machine Model

MRF9030LR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...10

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