Datasheet > MRF9045LSR1

MRF9045LSR1

更新时间： 2024-10-02 04:14:39

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
8页	224K
描述
RF Power Field Effect Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF9045LSR1 数据手册

MRF9045

Rev. 9, 12/2004

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N−Channel Enhancement−Mode Lateral MOSFETs

MRF9045LR1

MRF9045LSR1

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large−signal, common−source amplifier applica-

tions in 28 volt base station equipment.

• Typical Two−Tone Performance at 945 MHz, 28 Volts

Output Power — 45 Watts PEP

Power Gain — 18.8 dB

945 MHz, 45 W, 28 V

LATERAL N−CHANNEL

BROADBAND

Efficiency — 42%

IMD — −32 dBc

• Integrated ESD Protection

RF POWER MOSFETs

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large−Signal Impedance Parameters

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.

CASE 360B−05, STYLE 1

NI−360

MRF9045LR1

CASE 360C−05, STYLE 1

NI−360S

MRF9045LSR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain−Source Voltage

Gate−Source Voltage

−0.5, +65

−0.5, +15

Vdc

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

MRF9045LR1

125

0.71

175

W/°C

MRF9045LSR1

Storage Temperature Range

−65 to +150

°C

stg

Operating Junction Temperature

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

MRF9045LR1

MRF9045LSR1

1.4

1.0

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

M1 (Minimum)

Machine Model

NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF9045LR1 MRF9045LSR1

RF Device Data

Freescale Semiconductor

5−1

12 3 4 5 6 7 8

中文翻译

下载PDF

与MRF9045LSR1相关器件

型号	品牌	获取价格	描述	数据表
MRF9045M	MOTOROLA	获取价格	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode
MRF9045MBR1	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9045MR1	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9045NBR1	ROCHESTER	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272, ROHS COMPLIANT, PLASTIC, CASE 1337-03,
MRF9045NR1	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9045R1	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
MRF904HX	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-206AF
MRF904HXV	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
MRF905	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, TO-46
MRF905	ASI	获取价格	NPN SILICON RF TRANSISTOR

与MRF9045LSR1相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF9045LSR1

MRF9045LSR1 数据手册

与MRF9045LSR1相关器件

与MRF9045LSR1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF9045LSR1

MRF9045LSR1 数据手册

与MRF9045LSR1相关器件

与MRF9045LSR1相关文章

您还可以找

您在本页遇到什么问题？