MRF9045M

更新时间： 2024-10-02 04:14:39

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
8页	144K
描述
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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MRF9045M 数据手册

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SEMICONDUCTOR TECHNICAL DATA

The RF Sub–Micron MOSFET Line

N–Channel Enhancement–Mode Lateral MOSFET

Designed for broadband commercial and industrial applications at frequen-

cies up to 1.0 GHz. The high gain and broadband performance of this device

make it ideal for large–signal, common–source amplifier applications in 28 volt

base station equipment.

•

Typical Performance at 945 MHz, 28 Volts

Output Power – 45 Watts PEP

Power Gain – 18.5 dB

945 MHz, 45 W, 28 V

LATERAL N–CHANNEL

BROADBAND

RF POWER MOSFET

Efficiency – 41% (Two Tones)

IMD – –31 dBc

•

Integrated ESD Protection

Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,

45 Watts (CW) Output Power

•

Excellent Thermal Stability

Characterized with Series Equivalent Large–Signal Impedance

Parameters

CASE 1265–06, STYLE 1

(TO–270)

•

Moisture Sensitivity Level 3

RF Power Plastic Surface Mount Package

Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

PLASTIC

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

+15, –0.5

(1)

Total Device Dissipation @ T = 25°C

Derate above 25°C

156

Watts

W/°C

(1)

1.25

Storage Temperature Range

Operating Junction Temperature

–65 to +150

150

°C

stg

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

1 (Typical)

M2 (Typical)

Machine Model

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

(1)

0.8

Thermal Resistance, Junction to Case

(1) Simulated

°C/W

θJC

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 0

MOTOROLA RF DEVICE DATA

Motorola, Inc. 2000

MRF9045M MRF9045MR1

12 3 4 5 6 7 8

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