Datasheet > MRF9045NR1

MRF9045NR1

更新时间： 2024-10-02 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
12页	470K
描述
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF9045NR1 数据手册

Document Number: MRF9045N

Rev. 12, 9/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of this device

make it ideal for large-signal, common-source amplifier applications in 28 volt

base station equipment.

MRF9045NR1

• Typical Performance at 945 MHz, 28 Volts

Output Power — 45 Watts PEP

Power Gain — 19 dB

945 MHz, 45 W, 28 V

LATERAL N-CHANNEL

BROADBAND

Efficiency — 41% (Two Tones)

IMD — -31 dBc

• Integrated ESD Protection

RF POWER MOSFET

• Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,

45 Watts CW Output Power

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface

Mount.

• 200_C Capable Plastic Package

CASE 1265-09, STYLE 1

TO-270-2

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• TO-270-2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

PLASTIC

13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

- 0.5, +65

- 0.5, +15

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

177

1.18

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

Table 2. Thermal Characteristics

(1)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.85

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

M2 (Minimum)

Machine Model

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

MRF9045NR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

下载PDF

与MRF9045NR1相关器件

型号	品牌	获取价格	描述	数据表
MRF9045R1	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
MRF904HX	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-206AF
MRF904HXV	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
MRF905	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, TO-46
MRF905	ASI	获取价格	NPN SILICON RF TRANSISTOR
MRF905	NJSEMI	获取价格	Trans GP BJT NPN 15V 0.03A 4-Pin TO-72
MRF9060	MOTOROLA	获取价格	945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF9060	FREESCALE	获取价格	RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs
MRF9060LR1	FREESCALE	获取价格	RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs
MRF9060LR1	ROCHESTER	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-360, CASE 360B-05, 2 PIN

与MRF9045NR1相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF9045NR1

MRF9045NR1 数据手册

与MRF9045NR1相关器件

与MRF9045NR1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF9045NR1

MRF9045NR1 数据手册

与MRF9045NR1相关器件

与MRF9045NR1相关文章

您还可以找

您在本页遇到什么问题？