Datasheet > MRF9045LR1_08

MRF9045LR1_08

更新时间： 2024-10-02 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
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描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF9045LR1_08 数据手册

Document Number: MRF9045

Rev. 11, 9/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF9045LR1

MRF9045LSR1

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large-signal, common-source amplifier applica-

tions in 28 volt base station equipment.

• Typical Two-Tone Performance at 945 MHz, 28 Volts

Output Power — 45 Watts PEP

Power Gain — 18.8 dB

Efficiency — 42%

945 MHz, 45 W, 28 V

LATERAL N-CHANNEL

BROADBAND

IMD — -32 dBc

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW

Output Power

Features

RF POWER MOSFETs

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

• RoHS Compliant

CASE 360B-05, STYLE 1

NI-360

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

MRF9045LR1

CASE 360C-05, STYLE 1

NI-360S

MRF9045LSR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

- 0.5, +65

- 0.5, +15

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

MRF9045LR1

125

0.71

175

W/°C

MRF9045LSR1

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

- 65 to +150

150

°C

stg

200

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

MRF9045LR1

MRF9045LSR1

1.4

1.0

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

M1 (Minimum)

Machine Model

MRF9045LR1 MRF9045LSR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...11

中文翻译

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与MRF9045LR1_08相关器件

型号	品牌	获取价格	描述	数据表
MRF9045LSR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF9045M	MOTOROLA	获取价格	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode
MRF9045MBR1	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9045MR1	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9045NBR1	ROCHESTER	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272, ROHS COMPLIANT, PLASTIC, CASE 1337-03,
MRF9045NR1	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9045R1	MOTOROLA	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
MRF904HX	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-206AF
MRF904HXV	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Sili
MRF905	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN, TO-46

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