Datasheet > MRF9030MBR1

MRF9030MBR1

更新时间： 2024-10-01 04:14:39

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描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF9030MBR1 数据手册

MRF9030M

Rev. 9, 5/2006

Freescale Semiconductor

Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part

replacement. N suffix added to part number to indicate transition to lead-free terminations.

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF9030MR1

MRF9030MBR1

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large-signal, common-source amplifier applications

in 26 volt base station equipment.

• Typical Performance at 945 MHz, 26 Volts

Output Power — 30 Watts PEP

Power Gain — 20 dB

945 MHz, 30 W, 26 V

LATERAL N-CHANNEL

BROADBAND

Efficiency — 41% (Two Tones)

IMD — -31 dBc

RF POWER MOSFETs

• Integrated ESD Protection

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

CASE 1265-08, STYLE 1

TO-270-2

• Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface

Mount.

PLASTIC

MRF9030MR1

• 200_C Capable Plastic Package

• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

13 inch Reel.

• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

CASE 1337-03, STYLE 1

TO-272-2

PLASTIC

MRF9030MBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

- 0.5, +65

- 0.5, +15

Vdc

DSS

Total Device Dissipation @ T = 25°C

Derate above 25°C

139

0.93

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

1.08

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

M2 (Minimum)

Machine Model

Charge Device Model

MRF9030MR1

MRF9030MBR1

C7 (Minimum)

C6 (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF9030MR1 MRF9030MBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

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与MRF9030MBR1相关器件

型号	品牌	获取价格	描述	数据表
MRF9030MR1	MOTOROLA	获取价格	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode
MRF9030MR1	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF9030MR1_07	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF9030NBR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF9030NR1	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF9030NR1_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF9030R1	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9030S	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 360C-05, 3 PIN
MRF9030SR1	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF904	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-206AF

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