Datasheet > MRF9030NR1

MRF9030NR1

更新时间： 2024-10-02 04:14:39

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
16页	536K
描述
RF Power Field Effect Transistors

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MRF9030NR1 数据手册

Document Number: MRF9030N

Rev. 10, 5/2006

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF9030NR1

MRF9030NBR1

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of these

devices make them ideal for large-signal, common-source amplifier applications

in 26 volt base station equipment.

945 MHz, 30 W, 26 V

LATERAL N-CHANNEL

BROADBAND

• Typical Performance at 945 MHz, 26 Volts

Output Power — 30 Watts PEP

Power Gain — 20 dB

RF POWER MOSFETs

Efficiency — 41% (Two Tones)

IMD — -31 dBc

• Integrated ESD Protection

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW

Output Power

Features

CASE 1265-08, STYLE 1

TO-270-2

PLASTIC

MRF9030NR1

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface

Mount.

• 200_C Capable Plastic Package

CASE 1337-03, STYLE 1

TO-272-2

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

PLASTIC

MRF9030NBR1

13 inch Reel.

• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

- 0.5, +65

- 0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

139

0.93

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +150

200

°C

stg

Table 2. Thermal Characteristics

(1)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

1.08

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

M2 (Minimum)

Machine Model

Charge Device Model

MRF9030NR1

MRF9030NBR1

C7 (Minimum)

C6 (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

260

°C

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

MRF9030NR1 MRF9030NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

中文翻译

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与MRF9030NR1相关器件

型号	品牌	获取价格	描述	数据表
MRF9030NR1_06	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF9030R1	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9030S	MOTOROLA	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 360C-05, 3 PIN
MRF9030SR1	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF904	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-206AF
MRF904	MICROSEMI	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF904	ADPOW	获取价格	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF904	ASI	获取价格	NPN SILICON RF TRANSISTOR
MRF9045	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF9045LR1	FREESCALE	获取价格	RF Power Field Effect Transistors

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