生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
针数: | 2 | Reach Compliance Code: | unknown |
风险等级: | 5.12 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 68 V |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-CDFM-F2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 200 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 92 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MRF9030LSR1 | FREESCALE |
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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |
MRF9030LSR1 | MOTOROLA |
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The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode | |
MRF9030MBR1 | MOTOROLA |
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The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode | |
MRF9030MBR1 | FREESCALE |
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
MRF9030MR1 | MOTOROLA |
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The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode | |
MRF9030MR1 | FREESCALE |
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
MRF9030MR1_07 | FREESCALE |
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
MRF9030NBR1 | FREESCALE |
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RF Power Field Effect Transistors | |
MRF9030NR1 | FREESCALE |
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RF Power Field Effect Transistors | |
MRF9030NR1_06 | FREESCALE |
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RF Power Field Effect Transistors |