生命周期: | Transferred | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.75 |
配置: | Single | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 200 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 117 W |
子类别: | FET General Purpose Power | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MRF9030LR1 | MOTOROLA |
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The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode |
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MRF9030LR1 | FREESCALE |
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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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MRF9030LSR1 | FREESCALE |
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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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MRF9030LSR1 | MOTOROLA |
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The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode |
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MRF9030MBR1 | MOTOROLA |
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The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode |
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MRF9030MBR1 | FREESCALE |
获取价格 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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MRF9030MR1 | MOTOROLA |
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The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode |
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MRF9030MR1 | FREESCALE |
获取价格 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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MRF9030MR1_07 | FREESCALE |
获取价格 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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MRF9030NBR1 | FREESCALE |
获取价格 |
RF Power Field Effect Transistors |
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