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MRF9030D PDF预览

MRF9030D

更新时间: 2024-02-21 15:54:16
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飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
12页 543K
描述
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF9030D 技术参数

生命周期:Transferred包装说明:,
Reach Compliance Code:unknown风险等级:5.75
配置:SingleFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):117 W
子类别:FET General Purpose PowerBase Number Matches:1

MRF9030D 数据手册

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MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MRF9030/D  
The RF Sub-Micron MOSFET Line  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
Designed for broadband commercial and industrial applications with frequen-  
cies up to 1.0 GHz. The high gain and broadband performance of these devices  
make them ideal for large-signal, common-source amplifier applications in  
26 volt base station equipment.  
MRF9030LR1  
MRF9030LSR1  
Typical Two-Tone Performance at 945 MHz, 26 Volts  
Output Power — 30 Watts PEP  
Power Gain — 19 dB  
945 MHz, 30 W, 26 V  
LATERAL N-CHANNEL  
BROADBAND  
Efficiency — 41.5%  
IMD — -32.5 dBc  
RF POWER MOSFETs  
Integrated ESD Protection  
Designed for Maximum Gain and Insertion Phase Flatness  
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW  
Output Power  
Excellent Thermal Stability  
CASE 360B-05, STYLE 1  
NI-360  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.  
Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.  
MRF9030LR1  
CASE 360C-05, STYLE 1  
NI-360S  
MRF9030LSR1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
68  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
- 0.5, +15  
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
MRF9030LR1  
P
92  
0.53  
117  
Watts  
W/°C  
C
D
MRF9030LSR1  
0.67  
Storage Temperature Range  
T
- 65 to +150  
200  
°C  
°C  
stg  
Operating Junction Temperature  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
MRF9030LR1  
MRF9030LSR1  
R
θ
JC  
1.9  
1.5  
°C/W  
ESD PROTECTION CHARACTERISTICS  
Test Conditions  
Class  
Human Body Model  
1 (Minimum)  
M1 (Minimum)  
Machine Model  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 4  
Motorola, Inc. 2003  
For More Information On This Product,  
Go to: www.freescale.com  
 

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