Datasheet > MRF8S9100HR3_10

MRF8S9100HR3_10

更新时间： 2024-02-11 16:22:34

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描述
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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MRF8S9100HR3_10 数据手册

Document Number: MRF8S9100H

Rev. 1, 10/2010

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF8S9100HR3

MRF8S9100HSR3

Designed for GSM and GSM EDGE base station applications with

frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all

typical cellular base station modulation formats.

•

Typical GSM Performance: V_DD= 28 Volts, I_DQ= 500 mA, P_out

72 Watts CW

920--960 MHz, 72 W CW, 28 V

GSM, GSM EDGE

Frequency

920 MHz

940 MHz

960 MHz

(dB)

19.3

19.1

(%)

51.6

52.9

54.1

LATERAL N--CHANNEL

RF POWER MOSFETs

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW

Output Power (3 dB Input Overdrive from Rated P_out

)

•

Typical P_out@ 1 dB Compression Point ≃ 108 Watts CW

Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 700 mA, P_out

45 Watts Avg.

CASE 465--06, STYLE 1

NI--780

MRF8S9100HR3

SR1

@ 400 kHz

(dBc)

SR2

@ 600 kHz

(dBc)

EVM

(% rms)

Frequency

920 MHz

940 MHz

960 MHz

(dB)

19.1

19.0

(%)

--64.1

--63.6

--62.8

--74.5

--74.6

--75.1

1.8

CASE 465A--06, STYLE 1

NI--780S

2.0

MRF8S9100HSR3

2.3

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

•

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

•

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +70

--6.0, +10

32, +0

Unit

Vdc

°C

Drain--Source Voltage

DSS

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

--65 to +150

150

°C

(1,2)

225

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

MRF8S9100HR3 MRF8S9100HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...14

中文翻译

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与MRF8S9100HR3_10相关器件

型号	品牌	获取价格	描述	数据表
MRF8S9100HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8S9102NR3	FREESCALE	获取价格	RF Power Field Effect Transistor
MRF8S9170NR3	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF8S9170NR3_10	FREESCALE	获取价格	RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF8S9200NR3	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF8S9200NR3_10	FREESCALE	获取价格	RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF8S9202GNR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S9202N	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement--Mode Lateral MOSFET
MRF8S9202N_12	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S9202NR3	FREESCALE	获取价格	RF Power Field Effect Transistors

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