Datasheet > MRF8S9200NR3_10

MRF8S9200NR3_10

更新时间： 2024-02-05 12:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
13页	486K
描述
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

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MRF8S9200NR3_10 数据手册

Document Number: MRF8S9200N

Rev. 1, 5/2010

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed for CDMA base station applications with frequencies from 920 to

960 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

MRF8S9200NR3

•

Typical Single--Carrier W--CDMA Performance: V_DD= 28 Volts, I_DQ

1400 mA, P_out= 58 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

920--960 MHz, 58 W AVG., 28 V

SINGLE W--CDMA

Output PAR

(dB)

ACPR

(dBc)

Frequency

920 MHz

940 MHz

960 MHz

(dB)

19.9

19.5

(%)

37.7

37.1

36.8

LATERAL N--CHANNEL

RF POWER MOSFET

6.1

6.0

--36.2

--36.6

--36.0

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 300 Watts CW

Output Power (3 dB Input Overdrive from Rated P_out), Designed for

Enhanced Ruggedness

Typical P_out@ 1 dB Compression Point ≃ 200 Watts CW

Features

•

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

CASE 2021--03, STYLE 1

O M -- 7 8 0 -- 2

•

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

PLASTIC

•

225°C Capable Plastic Package

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +70

--6.0, +10

32, +0

Unit

Vdc

°C

Drain--Source Voltage

DSS

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

--65 to +150

150

°C

(1,2)

225

°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 80°C, 58 W CW, 28 Vdc, I

Case Temperature 80°C, 200 W CW, 28 Vdc, I

= 1400 mA

0.30

0.25

= 1400 mA

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF8S9200NR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...13

中文翻译

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与MRF8S9200NR3_10相关器件

型号	品牌	获取价格	描述	数据表
MRF8S9202GNR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S9202N	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement--Mode Lateral MOSFET
MRF8S9202N_12	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S9202NR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S9220HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8S9220HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8S9232NR3	NXP	获取价格	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, PLASTIC, CASE 2021-03, 2 PIN
MRF8S9260HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8S9260HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8VP13350GN	NXP	获取价格	RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V

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