Datasheet > MRF8P8300HSR6

MRF8P8300HSR6

更新时间： 2024-09-26 10:47:23

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飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频放大器
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描述
RF Power Field Effect Transistors

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数据手册

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MRF8P8300HSR6 数据手册

Document Number: MRF8P8300H

Rev. 0, 1/2011

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for W--CDMA and LTE base station applications with frequencies

from 790 to 820 MHz. Can be used in Class AB and Class C for all typical

cellular base station modulation formats.

MRF8P8300HR6

MRF8P8300HSR6

•

Typical Single--Carrier W--CDMA Performance: V_DD= 28 Volts, I_DQ

2000 mA, P_out= 96 Watts Avg., IQ Magnitude Clipping, Channel

790--820 MHz, 96 W AVG., 28 V

SINGLE W--CDMA

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

LATERAL N--CHANNEL

RF POWER MOSFETs

Output PAR

(dB)

ACPR

(dBc)

Frequency

790 MHz

805 MHz

820 MHz

(dB)

20.9

21.0

20.9

(%)

35.2

35.5

35.7

6.2

6.1

--38.1

--38.2

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW

Output Power (3 dB Input Overdrive from Rated P_out), Designed for

Enhanced Ruggedness

CASE 375D--05, STYLE 1

NI--1230

Typical P_out@ 1 dB Compression Point ≃ 340 Watts CW

MRF8P8300HR6

Features

•

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

•

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

RoHS Compliant

In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel option, see p. 14.

CASE 375E--04, STYLE 1

NI--1230S

MRF8P8300HSR6

•

RF /V

outA DSA

inA GSA

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +70

--6.0, +10

32, +0

Unit

Vdc

°C

RF /V

inB GSB

RF /V

outB DSB

Drain--Source Voltage

Gate--Source Voltage

DSS

Operating Voltage

(Top View)

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

--65 to +150

150

Figure 1. Pin Connections

°C

(1,2)

225

°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

°C/W

Thermal Resistance, Junction to Case

Case Temperature 80°C, 96 W CW, 28 Vdc, I

Case Temperature 85°C, 300 W CW, 28 Vdc, I

= 2000 mA, 820 MHz

0.26

0.21

= 2000 mA, 820 MHz

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF8P8300HR6 MRF8P8300HSR6

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...15

中文翻译

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与MRF8P8300HSR6相关器件

型号	品牌	获取价格	描述	数据表
MRF8P9040GNR1	NXP	获取价格	CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4.0 W Avg., 28 V
MRF8P9040N	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
MRF8P9040NBR1	NXP	获取价格	2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272, ROHS COMPLIANT, PLASTIC, CAS
MRF8P9040NR1	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
MRF8P9300HR6	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8P9300HR6_10	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P9300HSR6	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8S18120HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8S18120HR3_10	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8S18120HR5	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-502A

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