Datasheet > MRF8S18120HR3

MRF8S18120HR3

更新时间： 2024-09-26 05:50:11

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描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF8S18120HR3 数据手册

Document Number: MRF8S18120H

Rev. 0, 9/2009

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF8S18120HR3

MRF8S18120HSR3

Designed for GSM and GSM EDGE base station applications with

frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

all typical cellular base station modulation formats.

• Typical GSM Performance: V_DD= 28 Volts, I_DQ= 800 mA, P_out

72 Watts CW

1805-1880 MHz, 72 W CW, 28 V

GSM, GSM EDGE

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

18.2

18.6

18.7

(%)

49.8

51.4

53.9

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW

Output Power (3 dB Input Overdrive from Rated P_out

)

• Typical P_out@ 1 dB Compression Point ] 120 Watts CW

CASE 465-06, STYLE 1

NI-780

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 800 mA, P_out

46 Watts Avg.

MRF8S18120HR3

SR1

@ 400 kHz

(dBc)

SR2

@ 600 kHz

(dBc)

EVM

(% rms)

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

17.9

18.2

18.3

(%)

41.0

41.9

43.2

-64

-63

-61

-76

1.6

CASE 465A-06, STYLE 1

NI-780S

1.7

2.0

MRF8S18120HSR3

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

and Common Source S-Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

• Optimized for Doherty Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +65

-6.0, +10

32, +0

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Operating Voltage

DSS

Storage Temperature Range

Case Operating Temperature

stg

-65 to +150

150

°C

(1,2)

Operating Junction Temperature

225

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

MRF8S18120HR3 MRF8S18120HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...14

中文翻译

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与MRF8S18120HR3相关器件

型号	品牌	获取价格	描述	数据表
MRF8S18120HR3_10	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8S18120HR5	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-502A
MRF8S18120HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8S18210WGHSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S18210WHS	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S18210WHSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S18260H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S18260HR6	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S18260HSR6	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S19140HR3	NXP	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 465-06, NI-780, 2 PIN

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