Datasheet > MRF8S18210WHS

MRF8S18210WHS

更新时间： 2024-09-27 11:44:51

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
18页	751K
描述
RF Power Field Effect Transistors

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MRF8S18210WHS 数据手册

Document Number: MRF8S18210WHS

Rev. 0, 4/2012

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF8S18210WHSR3

MRF8S18210WGHSR3

Designed for CDMA base station applications with frequencies from1805 MHz

to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

1805 MHz -- 1995 MHz

50 W AVG., 30 V

SINGLE W--CDMA

LATERAL N--CHANNEL

RF POWER MOSFETs

•

Typical Single--Carrier W--CDMA Performance: V_DD= 30 Volts, I_DQ

1300 mA, P_out= 50 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability

on CCDF.

Output PAR

(dB)

ACPR

(dBc)

Frequency

1930 MHz

1960 MHz

1995 MHz

(dB)

17.8

18.1

(%)

29.2

28.2

27.6

7.0

7.1

--34.2

--34.4

--34.3

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW ⁽¹⁾

Output Power (3 dB Input Overdrive from Rated P_out

Typical P_out@ 1 dB Compression Point ≃ 210 Watts CW

)

NI--880XS--2

MRF8S18210WHSR3

1800 MHz

•

Typical Single--Carrier W--CDMA Performance: V_DD= 30 Volts, I_DQ

1300 mA, P_out= 50 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability

on CCDF.

Output PAR

(dB)

ACPR

(dBc)

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

18.2

18.1

18.2

(%)

30.1

29.1

27.8

7.3

7.4

--35.1

--35.4

--35.9

NI--880XS--2 GULL

MRF8S18210WGHSR3

Features

•

Designed for Wide Instantaneous Bandwidth Applications

Designed for Wideband Applications that Require 40 MHz Signal Bandwidth

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

RF /V

in GS

RF /V

out DS

•

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C Operation

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

For R5 Tape and Reel option, see p. 17.

(Top View)

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +65

--6.0, +10

32, +0

Unit

Drain--Source Voltage

Vdc

°C

DSS

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

--65 to +150

125

°C

(2,3)

225

°C

CW Operation @ T = 25°C

239

Derate above 25°C

1.44

W/°C

1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

2. Continuous use at maximum temperature will affect MTTF.

3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

MRF8S18210WHSR3 MRF8S18210WGHSR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...18

中文翻译

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与MRF8S18210WHS相关器件

型号	品牌	获取价格	描述	数据表
MRF8S18210WHSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S18260H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S18260HR6	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S18260HSR6	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S19140HR3	NXP	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 465-06, NI-780, 2 PIN
MRF8S19140HSR3	ROCHESTER	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 465A-06, NI-780, 2 PIN
MRF8S19140HSR3	NXP	获取价格	Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 34 W Avg., 28 V
MRF8S19260H	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF8S19260HSR6	NXP	获取价格	2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CASE 375J-02, NI-1230S
MRF8S21100HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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