Datasheet > MRF8P9040N

MRF8P9040N

更新时间： 2024-02-08 10:14:42

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
23页	910K
描述
N-Channel Enhancement-Mode Lateral MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF8P9040N 数据手册

Document Number: MRF8P9040N

Rev. 1, 10/2010

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF8P9040NR1

MRF8P9040GNR1

MRF8P9040NBR1

Designed for CDMA, W--CDMA and LTE base station applications with

frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for

all typical cellular base station modulation formats.

Driver Application — 900 MHz

•

Typical Single--Carrier W--CDMA Performance: V_DD= 28 Volts, I_DQ

320 mA, P_out= 4.0 Watts Avg., IQ Magnitude Clipping, Channel

728--960 MHz, 4.0 W AVG., 28 V

CDMA, W--CDMA, LTE

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

LATERAL N--CHANNEL

RF POWER MOSFETs

ACPR

(dBc)

Frequency

920 MHz

940 MHz

960 MHz

(dB)

18.9

19.1

(%)

18.9

19.5

19.9

--49.6

--50.1

--48.8

CASE 1486--03, STYLE 1

T O -- 2 7 0 W B -- 4

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 63 Watts CW

Output Power (3 dB Input Overdrive from Rated P_out), Designed for

Enhanced Ruggedness

PLASTIC

MRF8P9040NR1

Typical P_out@ 1 dB Compression Point ≃ 42 Watts CW

Driver Application — 700 MHz

•

Typical Single--Carrier W--CDMA Performance: V_DD= 28 Volts, I_DQ

320 mA, P_out= 4.0 Watts Avg., IQ Magnitude Clipping, Channel

CASE 1487--05, STYLE 1

T O -- 2 7 0 W B -- 4 G U L L

PLASTIC

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

MRF8P9040GNR1

ACPR

(dBc)

Frequency

728 MHz

748 MHz

768 MHz

(dB)

19.9

20.1

20.0

(%)

18.7

19.1

19.5

--49.9

--50.0

--49.9

CASE 1484--04, STYLE 1

T O -- 2 7 2 W B -- 4

Features

PLASTIC

MRF8P9040NBR1

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

•

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

RF /V

outA DSA

inA GSA

•

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

RF /V

inB GSB

RF /V

outB DSB

225°C Capable Plastic Package

RoHS Compliant

In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistors.

Figure 1. Pin Connections

MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...23

中文翻译

下载PDF

与MRF8P9040N相关器件

型号	品牌	获取价格	描述	数据表
MRF8P9040NBR1	NXP	获取价格	2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272, ROHS COMPLIANT, PLASTIC, CAS
MRF8P9040NR1	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
MRF8P9300HR6	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8P9300HR6_10	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P9300HSR6	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8S18120HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8S18120HR3_10	FREESCALE	获取价格	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8S18120HR5	NXP	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-502A
MRF8S18120HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF8S18210WGHSR3	FREESCALE	获取价格	RF Power Field Effect Transistors

与MRF8P9040N相关文章

L6234手册解读：引脚信息、电气参数
2024-07-01

1
解读BSP135H6327资料：电气参数及替换型号推荐
2024-07-01

1
FDG6302P资料解析：电气参数、产品特性
2024-07-01

3
SBAV99WT1G资料手册：参数信息、产品特性、替代型号推荐
2024-07-01

2

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF8P9040N

MRF8P9040N 数据手册

与MRF8P9040N相关器件

与MRF8P9040N相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MRF8P9040N

MRF8P9040N 数据手册

与MRF8P9040N相关器件

与MRF8P9040N相关文章

您还可以找

您在本页遇到什么问题？